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2SA1241-Y

Description
2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size178KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1241-Y Overview

2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SA1241-Y Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SA1241
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1241
Power Amplifier Applications
Power Switching Applications
Low Collector saturation voltage: V
CE (sat)
=
−0.5
V (max) (I
C
=
−1
A)
Excellent switching time: t
stg
= 1.0
μs
(typ.)
Complementary to 2SC3076
Unit:mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−2
−1
1.0
10
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-24

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