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BUP51_09

Description
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
File Size188KB,3 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
Download Datasheet View All

BUP51_09 Overview

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUP51
Low VCE(SAT), Fast switching.
Hermetic TO3 Metal package.
Ideally suited for Motor Control, Switching
and Linear Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCEX
VCEO
VEBO
IC
ICM
PD
TJ
Tstg
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
250V
175V
10V
80A
100A
300W
1.72W/°C
-55 to +200°C
-55 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.58
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8312
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
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