AOTF10N90
900V, 10A N-Channel MOSFET
General Description
The AOTF10N90 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
1000V@150℃
10A
< 0.98Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOTF10N90L
Top View
TO-220F
D
G
D
S
S
AOTF10N90
G
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF10N90
900
±30
10*
7*
38
3.7
205
410
5
50
0.4
-55 to 150
300
AOTF10N90
65
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
Repetitive avalanche energy
Single pulsed avalanche energy
E
AS
Peak diode recovery dv/dt
dv/dt
T
C
=25°
C
P
D
Power Dissipation
B
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A,D
R
θJA
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev0: Oct 2012
www.aosmd.com
Page 1 of 5
AOTF10N90
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
2100
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
130
10
1.5
45
V
GS
=10V, V
DS
=720V, I
D
=10A
2630
190
18
3.4
60
13
27
64
V
GS
=10V, V
DS
=450V, I
D
=10A,
R
G
=25Ω
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
460
7.0
105
155
84
575
9.9
700
12.0
I
D
=250µA, V
GS
=0V, T
J
=25°
C
I
D
=250µA, V
GS
=0V, T
J
=150°
C
ID=250µA, VGS=0V
V
DS
=900V, V
GS
=0V
V
DS
=720V, T
J
=125°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250µA
V
GS
=10V, I
D
=5A
V
DS
=40V, I
D
=5A
I
S
=1A,V
GS
=0V
3.4
4
0.82
17
0.7
1
10
38
3160
250
26
5.2
75
900
1000
0.9
1
10
±100
4.5
0.98
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.7A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2012
www.aosmd.com
Page 2 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
100
-55°C
V
DS
=40V
20
10V
6.5V
10
15
I
D
(A)
6V
I
D
(A)
125°C
10
V
GS
=5.5V
5
1
25°C
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
2.0
Normalized On-Resistance
0.1
2
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=10V
I
D
=5A
1.6
R
DS(ON)
(Ω)
Ω
1.2
V
GS
=10V
0.8
0.4
0.0
1.2
1E+02
1E+01
BV
DSS
(Normalized)
1.1
I
S
(A)
1E+00
40
125°C
1E-01
25°C
1E-02
1
0.9
1E-03
1E-04
0.8
-100
50
100
150
200
T
J
(°
C)
Figure 5: Break Down vs. Junction Temparature
-50
0
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev0: Oct 2012
www.aosmd.com
Page 3 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=720V
I
D
=10A
1000
Capacitance (pF)
C
oss
V
GS
(Volts)
9
10000
C
iss
12
100
C
rss
10
6
3
0
0
45
60
75
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
15
30
90
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
12
10
Current rating I
D
(A)
100
10µs
10
R
DS(ON)
limited
100µs
1ms
1
10ms
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
0
50
75
100
125
T
CASE
(°
C)
Figure 9: Current De-rating (Note B)
25
150
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF10N90 (Note F)
100
1000
0.1s
1s
8
6
4
2
0
I
D
(Amps)
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
10
Z
θ
JC
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N90 (Note F)
T
on
T
Rev0: Oct 2012
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Page 4 of 5
AOTF10N90
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VD
C
-
DUT
Vgs
Ig
+
VDC
Vds
Qgs
Q
gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R
L
Vds
Vds
Vgs
Rg
DU
T
+
VD
C
90%
Vdd
10%
Vgs
-
t
d(o
n)
t
r
t
on
t
d(o
ff)
t
off
t
f
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DU
T
Vgs
Vgs
Vgs
Vds
E
AR
1/2 LI
=
2
AR
BV
DSS
+
VDC
Vdd
Id
I
AR
-
Diode Recovery Tes t Circuit & Waveforms
Vds +
DUT
Vgs
Q
rr
= - Idt
Vds -
Isd
Vgs
L
Isd
I
F
dI/dt
I
RM
t
rr
VD
C
+
Vdd
-
Vds
Vdd
Ig
Rev0: Oct 2012
www.aosmd.com
Page 5 of 5
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