TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-560V
-560V
-150mA
-0.5V @ I
C
=-50mA,I
B
=-10mA
Features
●
●
Low Saturation Voltages
High Breakdown Voltage
Ordering Information
Part No.
TSA1765CW RP
Package
SOT-223
Packing
2.5Kpcs / 13” Reel
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Total Power Dissipation @ T
C
=25ºC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
tot
T
J
T
STG
Limit
-560
-560
-7
-150
-500
-50
2
+150
- 55 to +150
Unit
V
V
V
mA
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= -1mA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10uA, I
C
= 0
V
CB
= -560V, I
E
= 0
V
EB
= -7V, I
C
= 0
I
C
= -20mA, I
B
= -2mA
I
C
= -50mA, I
B
= -10mA
I
C
= -50mA, I
B
= -10mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
E
=-10mA
V
CB
= -20V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
1
V
BE(ON)
h
FE
1
h
FE
2
h
FE
3
f
T
Cob
Min
-560
-560
-7
--
--
--
--
--
--
150
80
--
50
--
Typ
--
--
--
--
--
--
--
--
--
--
--
15
--
--
Max
--
--
--
-100
-100
-0.2
-0.5
-1.0
-1.0
--
300
--
--
8
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
1/4
Version: C13
TSA1765
High Voltage PNP Epitaxial Planar Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
Figure 5. Safety Operation Area
2/4
Version: C13
TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
3/4
Version: C13
TSA1765
High Voltage PNP Epitaxial Planar Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: C13
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