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BAS16U

Description
0.2 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size900KB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAS16U Overview

0.2 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE

SMD Type
Switching Diodes
BAS16U
(KAS16U)
( SOT-23-6 )
Diodes
Unit: mm
0.4
-0.1
+0.1
Features
For high-speed switching applications
Pb-free (RoHS compliant) package
Qualified according AEC Q101
6
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
+0.2
-0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Reverse Voltage
Diode Reverse Voltage
Forward Current
Non-Repetitive Peak Surge Forward Current @ t=1us
Power Dissipation
Thermal Resistance Junction to Soldering point
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
R
I
F
I
FSM
P
D
R
θJS
T
J
T
stg
Rating
85
80
200
4.5
250
150
150
-65 to 150
Unit
V
mA
A
mW
℃/W
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Symbol
V
R
Test Conditions
I
R
= 100 uA
I
F
= 1 mA
I
F
= 10mA
Forward voltage
V
F
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
Forward recovery voltage
Reverse voltage leakage current
V
RF
I
R
I
F
= 10 mA , t
P
=20ns
V
R
=75 V
V
R
=25 V ,Ta = 25℃
V
R
=75 V ,Ta = 25℃
Capacitance between terminals
Reverse recovery time
C
T
t
rr
V
R
= 0 V, f= 1 MHz
I
F
=I
R
=10mA,Irr=0.1xI
R
, R
L
=100Ω
Min
85
0.715
0.855
1
1.2
1.25
1.75
0.1
30
50
2
4
pF
ns
uA
V
Typ
Max
Unit
Marking
Marking
A6s
+0.1
0.68
-0.1
0-0.1
+0.1
1.1
-0.1
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