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IRLU3103PBF

Description
Logic-Level Gate Drive
CategoryDiscrete semiconductor    The transistor   
File Size285KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLU3103PBF Overview

Logic-Level Gate Drive

IRLU3103PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-251AA
package instructionLEAD FREE, PLASTIC, IPAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)240 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)55 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.019 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)107 W
Maximum pulsed drain current (IDM)220 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95085A
IRLR/U3103PbF
Logic-Level Gate Drive
l
Ultra Low On-Resistance
l
Surface Mount (IRLR3103)
l
Straight Lead (IRLU3103)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
l
HEXFET
®
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 0.019Ω
G
S
I
D
= 55A
…
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-PAK
TO-252AA
I-PAK
TO-251AA
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚‡
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55…
39…
220
107
0.71
± 16
240
34
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
www.irf.com
1
12/7/04
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