IRF333 datasheet, PDF - EEWORLD Datasheet

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IRF333: Description5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size844KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF333 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow

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, O

ne.

20

STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

IRF330-333/IRF730-733

MTM/MTP5N35/5N40

N-Channel Power MOSFETs,

5.5 A, 350 V/400 V

Power And Discrete Division

Description

These devices are n-channol, enhancement mode, power

MOSFETs designed especially for high voltage, high speed

applications, such as off-line switching power supplies,

UPS, AC and DC motor controls, relay and solenoid

drivers.

• V

QS

Rated at ±20 V

• Silicon Gate for Fast Switching Speeds

• "DSS. VDS(on). »w»

Temperature

'

Rua9ed

* VQS(lh) apecmi

IRF330

|RF331

TO-220AB

IRF730

|RF?31

IRF332

IRF333

MTM5N35

MTM5N4

°

IRF732

IRF733

MTP5N3S

MTPSN4

°

Maximum Ratings

Symbol

VDSS

VDOR

Characteristic

Drain to Source Voltage

Drain to Gate Voltage

Gate to Source Voltage

Operating Junction and

Storage Temperature

Maximum Lead Temperature

for Soldering Purposes,

1/8" From Case for 5 s

Rating

IRF330/332

IRF730/732

MTM/MTP5N40

400

±20

Rating

IRF331/333

IRF731/733

MTM/MTP5N36

350

±20

Unit

V

GS

Tj, T

slg

-55 to

+150

275

-55 to

+150

275

°c

TL

«c

Maximum On-State Characteristics

IRF330/331

IRF730/731

RDS (on)

IRF332/333

IRF732/733

1.5

MTM5N35/40

MTP5N35/40

1.0

Static Drain-to-Source

On Resistance

Drain Current

Continuous

Pulsed

1.0

n

A

ID

5.5

22

4.5

22

5.0

22

Maximum Thermal Characteristics

RSJC

Thermal Resistance,

Junction to Case

Total Power Dissipation

at T

c

= 25°C

1.67

°C/W

PD

75

W

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

IRF333 Related Products

	IRF333	IRF730	IRF732	IRF331	IRF731	IRF332	IRF733	MTP5N3S
Description	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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