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2N3705

Description
PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS
File Size357KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3705 Overview

PNP NPN SILICON GENERAL PURPOSE AF TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3704 2N3705
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
E
CB
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
Total Device Dissipation at T
a
=25ºC
P
D
Derate Above 25ºC
Operating And Storage Junction
T
j
, T
stg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
R
th (j-a)
2N3704
30
50
5.0
600
625
5.0
- 55 to +150
2N3705
UNIT
V
V
V
mA
mW
mW/ºC
ºC
200
MIN
30
50
5.0
100
50
MAX
ºC/W
UNIT
V
V
V
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=100µA, I
E
=0
Collector Base Voltage
V
EBO
I
E
=100µA, I
C
=0
Emitter Base Voltage
*h
FE
V
CE
=2V, I
C
=50mA
DC Current Gain
2N3704
2N3705
I
CBO
V
CB
=20V, I
E
=0
Collector Cut Off Current
I
EBO
V
EB
=3V, I
C
=0
Emitter Cut Off Current
Collector Emitter Saturation Voltage
*V
CE (sat)
I
C
=100mA, I
B
=5mA
2N3704
2N3705
I
C
=100mA, V
CE
=2V
300
150
100
100
nA
nA
Base Emitter (On) Voltage
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transistors Frequency
Output Capacitance
*V
BE (on)
0.5
0.6
0.8
1.0
V
V
V
SYMBOL
TEST CONDITION
f
T
I
C
=50mA, V
CE
=2V, f=20MHz
C
ob
I
E
=0, V
CB
=10V, f=1MHz
MIN
100
MAX
12
UNIT
MHz
pF
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
2N3704_2N3705Rev_1 081205E
Continental Device India Limited
Data Sheet
Page 1 of 4

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