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BSS81C

Description
800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
CategoryDiscrete semiconductor    The transistor   
File Size159KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BSS81C Overview

800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

BSS81C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)310 ns
Maximum opening time (tons)35 ns
VCEsat-Max1.3 V
Base Number Matches1
NPN Silicon Switching Transistors
BSS 79
BSS 81
q
High DC current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BSS 80, BSS 82 (PNP)
Type
BSS 79 B
BSS 79 C
BSS 81 B
BSS 81 C
Marking
CEs
CFs
CDs
CGs
Ordering Code
(tape and reel)
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BSS 81
BSS 79
40
6
800
1
100
200
330
150
– 65 … + 150
35
75
Unit
V
mA
A
mA
mW
˚C
R
th JA
R
th JS
290
220
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

BSS81C Related Products

BSS81C BSS79 BSS79B BSS79C BSS81B Q62702-S605 Q62702-S555 Q62702-S501
Description 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
surface mount YES YES YES YES YES Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL pair pair pair
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING switch switch switch
Transistor component materials SILICON SILICON SILICON SILICON SILICON silicon silicon silicon
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - - -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - - -
Reach Compliance Code unknow unknow unknow unknow unknow - - -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - - -
Maximum collector current (IC) 0.8 A 1 A 0.8 A 0.8 A 0.8 A - - -
Collector-emitter maximum voltage 35 V 40 V 40 V 40 V 35 V - - -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - - -
Minimum DC current gain (hFE) 50 40 25 50 25 - - -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - - -
JESD-609 code e0 e0 e0 e0 e0 - - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - -
Polarity/channel type NPN NPN NPN NPN NPN - - -
Maximum power dissipation(Abs) 0.33 W 0.35 W 0.225 W 0.225 W 0.33 W - - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - -
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz - - -
VCEsat-Max 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V - - -
Base Number Matches 1 1 1 1 1 - - -

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