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Q62702-S555

Description
800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Categorysemiconductor    Discrete semiconductor   
File Size159KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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Q62702-S555 Overview

800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

Q62702-S555 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time35 ns
Maximum off time310 ns
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage40 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3300 W
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency250 MHz
NPN Silicon Switching Transistors
BSS 79
BSS 81
q
High DC current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BSS 80, BSS 82 (PNP)
Type
BSS 79 B
BSS 79 C
BSS 81 B
BSS 81 C
Marking
CEs
CFs
CDs
CGs
Ordering Code
(tape and reel)
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BSS 81
BSS 79
40
6
800
1
100
200
330
150
– 65 … + 150
35
75
Unit
V
mA
A
mA
mW
˚C
R
th JA
R
th JS
290
220
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

Q62702-S555 Related Products

Q62702-S555 BSS79 BSS79B BSS79C BSS81B BSS81C Q62702-S605 Q62702-S501
Description 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Number of terminals 3 3 3 3 3 3 3 3
surface mount Yes YES YES YES YES YES Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location pair DUAL DUAL DUAL DUAL DUAL pair pair
Number of components 1 1 1 1 1 1 1 1
transistor applications switch SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING switch switch
Transistor component materials silicon SILICON SILICON SILICON SILICON SILICON silicon silicon
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible - -
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - -
Reach Compliance Code - unknow unknow unknow unknow unknow - -
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 - -
Maximum collector current (IC) - 1 A 0.8 A 0.8 A 0.8 A 0.8 A - -
Collector-emitter maximum voltage - 40 V 40 V 40 V 35 V 35 V - -
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE - -
Minimum DC current gain (hFE) - 40 25 50 25 50 - -
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - -
JESD-609 code - e0 e0 e0 e0 e0 - -
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C - -
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
Polarity/channel type - NPN NPN NPN NPN NPN - -
Maximum power dissipation(Abs) - 0.35 W 0.225 W 0.225 W 0.33 W 0.33 W - -
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Nominal transition frequency (fT) - 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz - -
VCEsat-Max - 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V - -
Base Number Matches - 1 1 1 1 1 - -

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