Q62702-S501 datasheet, PDF - EEWORLD Datasheet

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Q62702-S501: Description800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236; Categorysemiconductor Discrete semiconductor; File Size159KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q62702-S501 Overview

800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

Q62702-S501 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	35 ns
Maximum off time	310 ns
Maximum collector current	0.8000 A
Maximum Collector-Emitter Voltage	40 V
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.3300 W
Transistor type	Universal small signal
Minimum DC amplification factor	50
Rated crossover frequency	250 MHz

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NPN Silicon Switching Transistors

BSS 79

BSS 81

High DC current gain

Low collector-emitter saturation voltage

Complementary types: BSS 80, BSS 82 (PNP)

Type

BSS 79 B

BSS 79 C

BSS 81 B

BSS 81 C

Marking

CEs

CFs

CDs

CGs

Ordering Code

(tape and reel)

Q62702-S503

Q62702-S501

Q62702-S555

Q62702-S605

Pin Configuration

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

= 77 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

Symbol

CE0

CB0

EB0

tot

stg

Values

BSS 81

BSS 79

800

100

200

330

150

– 65 … + 150

Unit

˚C

th JA

th JS

≤

290

≤

220

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

5.91

Q62702-S501 Related Products

	Q62702-S501	BSS79	BSS79B	BSS79C	BSS81B	BSS81C	Q62702-S605	Q62702-S555
Description	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Number of terminals	3	3	3	3	3	3	3	3
surface mount	Yes	YES	YES	YES	YES	YES	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	DUAL	DUAL	DUAL	DUAL	pair	pair
Number of components	1	1	1	1	1	1	1	1
transistor applications	switch	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	switch	switch
Transistor component materials	silicon	SILICON	SILICON	SILICON	SILICON	SILICON	silicon	silicon
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	-	-
package instruction	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	-
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	-	-
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	-	-
Maximum collector current (IC)	-	1 A	0.8 A	0.8 A	0.8 A	0.8 A	-	-
Collector-emitter maximum voltage	-	40 V	40 V	40 V	35 V	35 V	-	-
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
Minimum DC current gain (hFE)	-	40	25	50	25	50	-	-
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	-
JESD-609 code	-	e0	e0	e0	e0	e0	-	-
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	-	-
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-
Polarity/channel type	-	NPN	NPN	NPN	NPN	NPN	-	-
Maximum power dissipation(Abs)	-	0.35 W	0.225 W	0.225 W	0.33 W	0.33 W	-	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Nominal transition frequency (fT)	-	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	-	-
VCEsat-Max	-	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	-	-
Base Number Matches	-	1	1	1	1	1	-	-

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