BSS81B datasheet, PDF - EEWORLD Datasheet

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BSS81B: Description800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236; CategoryDiscrete semiconductor The transistor; File Size159KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS81B Overview

800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

BSS81B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.33 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	310 ns
Maximum opening time (tons)	35 ns
VCEsat-Max	1.3 V
Base Number Matches	1

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NPN Silicon Switching Transistors

BSS 79

BSS 81

High DC current gain

Low collector-emitter saturation voltage

Complementary types: BSS 80, BSS 82 (PNP)

Type

BSS 79 B

BSS 79 C

BSS 81 B

BSS 81 C

Marking

CEs

CFs

CDs

CGs

Ordering Code

(tape and reel)

Q62702-S503

Q62702-S501

Q62702-S555

Q62702-S605

Pin Configuration

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

= 77 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

Symbol

CE0

CB0

EB0

tot

stg

Values

BSS 81

BSS 79

800

100

200

330

150

– 65 … + 150

Unit

˚C

th JA

th JS

≤

290

≤

220

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

5.91

BSS81B Related Products

	BSS81B	BSS79	BSS79B	BSS79C	BSS81C	Q62702-S605	Q62702-S555	Q62702-S501
Description	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
surface mount	YES	YES	YES	YES	YES	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	pair	pair	pair
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	switch	switch	switch
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	silicon	silicon	silicon
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	-	-
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	-	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	-	-	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	-	-
Maximum collector current (IC)	0.8 A	1 A	0.8 A	0.8 A	0.8 A	-	-	-
Collector-emitter maximum voltage	35 V	40 V	40 V	40 V	35 V	-	-	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-	-
Minimum DC current gain (hFE)	25	40	25	50	50	-	-	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	-	-
JESD-609 code	e0	e0	e0	e0	e0	-	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-	-
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	-	-	-
Maximum power dissipation(Abs)	0.33 W	0.35 W	0.225 W	0.225 W	0.33 W	-	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	-
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	-	-	-
VCEsat-Max	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	-	-	-
Base Number Matches	1	1	1	1	1	-	-	-

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