i,
O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
2N6738
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in high-voltage, high-speed , power switc-
hing in inductive circuit, they are particularly suited for 115
and 220V switchmode applications such as switching regu-
lators, inverters, DC-DC and converter.
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCEV
VCEX
VCEO
VEBO
Ic
ICM
IB
PC
T,
T
stg
1 2 3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
PARAMETER
Collector-Emitter Voltage-V
BE
= -1 .5V
Collector-Emitter Voltage-V
B
E= -1 .5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
T
C
=25'C
Junction Temperature
Storage Ttemperature Range
VALUE
450
350
300
8
8
10
4
100
150
UNIT
V
V
V
V
A
A
A
W
'C
SM
T
ES
mm
DIM
MIN
A
15.70
9.90
B
C
4.20
D
0.70
3.40
F
G
4.98
2.70
H
J
0.44
K
13.20
1.10
L
2.70
Q
R
MAX
-65-150
•c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
UNIT
s
LJ
V
1.25
•c/w
2.50
1.29
6.45
8.66
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain — Bandwidth Product
CONDITIONS
l
c
= 200mA; I
B
= 0
lc= 5A; I
B
= 1A
MIN
2N6738
MAX
UNIT
V
VcEO(SUS)
300
1
VcE(sat)-1
V
VcE(sat)-2
VeE(sat)
ICEV
lc= 8A; I
B
= 4A
2
V
lc= 5A; I
B
= 1A
1.6
0.1
1.0
2
V
mA
VcEv=450V;V
B
E(off)=-1.5V
VcEv=450V;V
B
E(off)=-1.5V;Tj= 100°C
V
EB
= 8V; l
c
= 0
lc= 5A ; V
CE
= 3V
lc= 0.2A; V
CE
= 10V, f
tes
t= 1MHz
10
10
I £80
mA
HFE
fr
40
60
MHz
Switching Times; Resistive Load
td
t
r
Delay Time
Rise Time
lc= 5A; I
B
1= -I
B2
= 1A,V
CC
= 125V;
t
p
= 20 u s, Duty Cycled 1%
Storage Time
Fall Time
0.1
0.4
2.5
0.5
us
ns
us
w s
ts
tf
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