SKM50GB121D datasheet, PDF - EEWORLD Datasheet

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SKM50GB121D: DescriptionSEMITRANS M IGBT Modules; CategoryDiscrete semiconductor The transistor; File Size606KB，8 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKM50GB121D Overview

SEMITRANS M IGBT Modules

SKM50GB121D Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	800 W
Maximum power dissipation(Abs)	400 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	250 ns
Nominal on time (ton)	80 ns
VCEsat-Max	3.5 V

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SKM50GB121D Related Products

	SKM50GB121D	SKM50GB101D	SKM50GAR121D	SKM50GAL121D	SKM50GAL101D
Description	SEMITRANS M IGBT Modules	SEMITRANS M IGBT Modules	SEMITRANS M IGBT Modules	SEMITRANS M IGBT Modules	SEMITRANS M IGBT Modules
Maker	SEMIKRON	-	SEMIKRON	SEMIKRON	SEMIKRON
package instruction	FLANGE MOUNT, R-PUFM-X7	-	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknow	-	unknow	unknow	unknow
Shell connection	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	50 A	-	50 A	50 A	50 A
Collector-emitter maximum voltage	1200 V	-	1200 V	1200 V	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V	-	6.5 V	6.5 V	6.5 V
Gate-emitter maximum voltage	20 V	-	20 V	20 V	20 V
JESD-30 code	R-PUFM-X7	-	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7
Number of components	2	-	1	1	1
Number of terminals	7	-	7	7	7
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	800 W	-	400 W	400 W	400 W
Maximum power dissipation(Abs)	400 W	-	400 W	400 W	400 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO
Terminal form	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	-	UPPER	UPPER	UPPER
transistor applications	MOTOR CONTROL	-	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal off time (toff)	250 ns	-	250 ns	250 ns	250 ns
Nominal on time (ton)	80 ns	-	80 ns	80 ns	80 ns
VCEsat-Max	3.5 V	-	3.5 V	3.5 V	3.5 V

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