SEMITRANS M IGBT Modules
| SKM50GB101D | SKM50GB121D | SKM50GAR121D | SKM50GAL121D | SKM50GAL101D | |
|---|---|---|---|---|---|
| Description | SEMITRANS M IGBT Modules | SEMITRANS M IGBT Modules | SEMITRANS M IGBT Modules | SEMITRANS M IGBT Modules | SEMITRANS M IGBT Modules |
| Maker | - | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON |
| package instruction | - | FLANGE MOUNT, R-PUFM-X7 | FLANGE MOUNT, R-PUFM-X7 | FLANGE MOUNT, R-PUFM-X7 | FLANGE MOUNT, R-PUFM-X7 |
| Reach Compliance Code | - | unknow | unknow | unknow | unknow |
| Shell connection | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | - | 50 A | 50 A | 50 A | 50 A |
| Collector-emitter maximum voltage | - | 1200 V | 1200 V | 1200 V | 1000 V |
| Configuration | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Gate emitter threshold voltage maximum | - | 6.5 V | 6.5 V | 6.5 V | 6.5 V |
| Gate-emitter maximum voltage | - | 20 V | 20 V | 20 V | 20 V |
| JESD-30 code | - | R-PUFM-X7 | R-PUFM-X7 | R-PUFM-X7 | R-PUFM-X7 |
| Number of components | - | 2 | 1 | 1 | 1 |
| Number of terminals | - | 7 | 7 | 7 | 7 |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | - | 800 W | 400 W | 400 W | 400 W |
| Maximum power dissipation(Abs) | - | 400 W | 400 W | 400 W | 400 W |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | - | NO | NO | NO | NO |
| Terminal form | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | - | UPPER | UPPER | UPPER | UPPER |
| transistor applications | - | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON |
| Nominal off time (toff) | - | 250 ns | 250 ns | 250 ns | 250 ns |
| Nominal on time (ton) | - | 80 ns | 80 ns | 80 ns | 80 ns |
| VCEsat-Max | - | 3.5 V | 3.5 V | 3.5 V | 3.5 V |