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SKM50GAL101D

Description
SEMITRANS M IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size606KB,8 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM50GAL101D Overview

SEMITRANS M IGBT Modules

SKM50GAL101D Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1000 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment400 W
Maximum power dissipation(Abs)400 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)250 ns
Nominal on time (ton)80 ns
VCEsat-Max3.5 V

SKM50GAL101D Related Products

SKM50GAL101D SKM50GB121D SKM50GB101D SKM50GAR121D SKM50GAL121D
Description SEMITRANS M IGBT Modules SEMITRANS M IGBT Modules SEMITRANS M IGBT Modules SEMITRANS M IGBT Modules SEMITRANS M IGBT Modules
Maker SEMIKRON SEMIKRON - SEMIKRON SEMIKRON
package instruction FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 - FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknow unknow - unknow unknow
Shell connection ISOLATED ISOLATED - ISOLATED ISOLATED
Maximum collector current (IC) 50 A 50 A - 50 A 50 A
Collector-emitter maximum voltage 1000 V 1200 V - 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum 6.5 V 6.5 V - 6.5 V 6.5 V
Gate-emitter maximum voltage 20 V 20 V - 20 V 20 V
JESD-30 code R-PUFM-X7 R-PUFM-X7 - R-PUFM-X7 R-PUFM-X7
Number of components 1 2 - 1 1
Number of terminals 7 7 - 7 7
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power consumption environment 400 W 800 W - 400 W 400 W
Maximum power dissipation(Abs) 400 W 400 W - 400 W 400 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO - NO NO
Terminal form UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER - UPPER UPPER
transistor applications MOTOR CONTROL MOTOR CONTROL - MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal off time (toff) 250 ns 250 ns - 250 ns 250 ns
Nominal on time (ton) 80 ns 80 ns - 80 ns 80 ns
VCEsat-Max 3.5 V 3.5 V - 3.5 V 3.5 V
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