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FOD3184

Description
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER
CategoryLED optoelectronic/LED   
File Size650KB,23 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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FOD3184 Overview

1 CHANNEL LOGIC OUTPUT OPTOCOUPLER

FOD3184 Parametric

Parameter NameAttribute value
Maximum operating temperature100 Cel
Minimum operating temperature-40 Cel
Number of functions1
Processing package descriptionLEAD FREE, DIP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
terminal coatingMATTE TIN
structureSINGLE
Optoelectronic device typeLOGIC OUTPUT
Maximum input control current16 mA
Maximum insulation voltage5000 V
Minimum operating supply voltage15 V
FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
February 2011
FOD3184
3A Output Current, High Speed MOSFET/IGBT
Gate Driver Optocoupler
Features
High noise immunity characterized by 50kV/µs (Typ.)
Applications
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET/IGBT gate drive
common mode rejection @ V
CM
= 2,000V
Guaranteed operating temperature range of
-40°C to +100°C
3A peak output current for medium power
MOSFET/IGBT
Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
Fast output rise/fall time
– Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide V
DD
operating range from 15V to 30V
Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply rail
(rail-to-rail output)
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving IGBTs
Safety and regulatory approvals
– UL1577, 5,000 VAC
RMS
for 1 min.
– DIN EN/IEC 60747-5-2, 1,414 peak working
insulation voltage
• Minimum creepage distance of 8.0mm
• Minimum clearance distance of 8mm to 16mm
(option TV or TSV)
• Minimum insulation thickness of 0.5mm
Description
The FOD3184 is a 3A Output Current, High Speed
MOSFET/IGBT Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS/IGBT used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Functional Block Diagram
NC
1
8
V
DD
Package Outlines
8
8
1
1
ANODE
2
7
V
O2
6
V
O1
CATHODE
3
NC
4
5
V
SS
8
8
1
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
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