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SUT461N

Description
Epitaxial planar NPN silicon transistor
CategoryDiscrete semiconductor    The transistor   
File Size286KB,5 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SUT461N Overview

Epitaxial planar NPN silicon transistor

SUT461N Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
SUT461N
Epitaxial planar NPN silicon transistor
Descriptions
Complex type bipolar transistor
Features
Reduce quantity of parts and mounting cost
High collector power dissipation : P
C
=300mW(Max.)
Two 2SC5343 chips in SOT-26 Package
Package : SOT-26
Ordering Information
Type NO.
SUT461N
Marking
69
: Year & Week Code
Package Code
SOT-26
Equivalent circuit & PIN Connections
Equivalent Circuit
4
5
6
PIN Connections
1.
2.
3.
4.
Collector 1
Base 2
Emitter 2
Collector 2
Tr2
Tr1
5. Base 1
6. Emitter 1
2
1
3
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
50
5
150
300
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
※:
Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P001-002
1

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Index Files: 2217  1118  2063  517  2925  45  23  42  11  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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