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BY329X

Description
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Categorysemiconductor    Discrete semiconductor   
File Size39KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Compare View All

BY329X Overview

Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes

Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes in a full pack plastic
envelope featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.
BY329X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
PARAMETER
BY329X
Repetitive peak reverse
voltage
Average forward current
Non-repetitive peak
forward current
Reverse recovery time
MAX. MAX. MAX.
-800
800
8
65
145
-1000 -1200
1000 1200
8
65
145
8
65
145
UNIT
V
A
A
ns
PINNING - SOD113
PIN
1
2
DESCRIPTION
cathode
anode
PIN CONFIGURATION
case
SYMBOL
k
1
a
2
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(AV)
PARAMETER
Non-repetitive peak reverse
voltage
Repetitive peak reverse voltage
Crest working reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
hs
83 ˚C
sinusoidal; a = 1.57;
T
hs
90 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-800
800
800
600
MAX.
-1000 -1200
1000 1200
1000
800
8
7
11
16
65
71
1200
1000
UNIT
V
V
V
A
A
A
A
A
A
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
hs
83 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
-
-40
-
28
150
150
A
2
s
˚C
˚C
1
Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000

BY329X Related Products

BY329X BY329X-1200 BY329X-800
Description Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes Rectifier diodes fast, soft-recovery
Is it Rohs certified? - incompatible incompatible
Maker - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code - unknow unknow
Configuration - SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.85 V 1.85 V
JESD-609 code - e0 e0
Maximum non-repetitive peak forward current - 65 A 65 A
Number of components - 1 1
Maximum operating temperature - 150 °C 150 °C
Maximum output current - 8 A 8 A
Maximum repetitive peak reverse voltage - 1200 V 800 V
surface mount - NO NO
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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