DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
PSMA8.5A to PSMA78A
Transient voltage suppressor
diodes
Product specification
Supersedes data of 1998 Dec 04
1999 Jan 26
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Transient suppressor stand-off
voltage range: 8.5 to 78 V for
26 types
•
Supplied in 12 mm embossed tape.
handbook, 4 columns
PSMA8.5A to PSMA78A
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,,
,,
,,
k
cathode
band
a
Top view
Side view
MSA473
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
RSM
PARAMETER
non-repetitive peak reverse power
dissipation
CONDITIONS
10/1000
µs
exponential pulse;
T
j
= 25
°C
prior to surge;
see Figs.3 and 5
VALUE
400
W
UNIT
1999 Jan 26
2
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
T
stg
T
j
PARAMETER
forward voltage
storage temperature
junction temperature
CONDITIONS
I
F
= 0.5 A
PSMA8.5A to PSMA78A
MIN.
−
−65
−65
MAX.
1.2
+175
+175
V
°C
°C
UNIT
Per type
T
j
= 25
°C
unless otherwise specified.
REVERSE
VOLTAGE
(max)
@ I
RSM
(CLAMPING
VOLTAGE)
V
RSM
(V)
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
REVERSE
SURGE
CURRENT
(max)
REVERSE
LEAKAGE
CURRENT
(max)
@ V
RWM
REVERSE
STAND-OFF
VOLTAGE
DEVICE
(note
1)
V
RWM
(V)
PSMA8.5A
PSMA9.0A
PSMA10A
PSMA11A
PSMA12A
PSMA13A
PSMA14A
PSMA15A
PSMA16A
PSMA17A
PSMA18A
PSMA20A
PSMA22A
PSMA24A
PSMA26A
PSMA28A
PSMA30A
PSMA33A
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
BREAKDOWN
VOLTAGE
V
BR
min.
(V)
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
I
RSM
(A)
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
I
R
(µA)
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1999 Jan 26
3
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
PSMA8.5A to PSMA78A
REVERSE
STAND-OFF
VOLTAGE
DEVICE
(note
1)
V
RWM
(V)
PSMA36A
PSMA40A
PSMA43A
PSMA45A
PSMA48A
PSMA51A
PSMA54A
PSMA58A
PSMA60A
PSMA64A
PSMA70A
PSMA75A
PSMA78A
Note
36
40
43
45
48
51
54
58
60
64
70
75
78
BREAKDOWN
VOLTAGE
REVERSE
VOLTAGE
(max)
@ I
RSM
(CLAMPING
VOLTAGE)
V
RSM
(V)
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
REVERSE
SURGE
CURRENT
(max)
REVERSE
LEAKAGE
CURRENT
(max)
@ V
RWM
V
BR
min.
(V)
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
I
RSM
(A)
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
3.2
I
R
(µA)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1. Tolerance and Voltage Designation: Tolerance designation - The type number listed indicates a tolerance of
±.5%
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.4.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
‘General part of the associated handbook’.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1999 Jan 26
4
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
GRAPHICAL DATA
PSMA8.5A to PSMA78A
handbook, halfpage
4
MGR463
10
4
handbook, halfpage
MGR465
Ptot
(W)
3
PRSM
(W)
2
10
3
1
0
0
100
T (°C)
200
10
2
10
−2
10
−1
1
t2 (ms)
10
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
printed-circuit board as shown in Fig.4.
T
j
= 25
°C
prior to surge.
Fig.3
Fig.2
Maximum total power dissipation as a
function of temperature.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (exponential pulse).
50
IRSM
handbook, halfpage
(%)
100
90
4.5
50
2.5
50
10
1.25
MSB213
t
t1
t2
In accordance with
“IEC 60-1, Section 8”.
t
1
= 10
µs.
t
2
= 1000
µs.
MGD521
Dimensions in mm.
Fig.5
Fig.4 Printed-circuit board for surface mounting.
Non-repetitive peak reverse current pulse
definition.
1999 Jan 26
5
Embedded System
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