MSiCSN10060CC, CA, and D
Silicon Carbide
Dual Schottky Power Rectifier 10A, 600V
Available
ORDERABLE PART NUMBERS
MSiCSN10060CC
MSiCSN10060CA
MSiCSN10060D
Configuration
Common Cathode
Common Anode
Doubler
DESCRIPTION
These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with
options for common cathode, common anode, and doubler configurations. They offer very
fast switching capabilities with greater efficiency at higher operating temperatures compared
to existing ultrafast silicon rectifiers.
TO-257 Package
Also available in:
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
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•
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TO-257 package
Lightweight
Hermetically sealed package
Internal metallurgical bonds
High temperature (T
J
) +175
o
C
Zero reverse recovery current
Temperature independent switching behavior
Very fast switching compared to fast or ultrafast rectifiers
Positive V
F
temperature coefficient (parallel devices for higher currents)
RoHS compliant versions are available
Dual U3 package
(surface mount)
MSiCSS10060CC
U4 package
(surface mount)
MSiCSS10060
TO-257 package
(leaded)
MSiCSN10060
APPLICATIONS / BENEFITS
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Schottky barrier diode for military, space and other high reliability applications
Switching power supplies or other applications requiring extremely fast switching and
essentially no switching losses
High forward surge capability
High reverse voltage capability with very fast switching.
Inherently radiation hard >100 krads as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
@ T
C
= +25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-Case
Working Peak Reverse Voltage
Non-Repetitive Peak Inverse Voltage
DC Blocking Voltage
o
Average DC Output Current @ 25 C
Non-Repetitive Sinusoidal Surge Current
@ tp = 8.3 ms, half sinewave, I
O
= 0; V
RM
= 0
Symbol
T
J
and T
STG
R
θ
JC
V
RWM
V
RSM
V
DC
I
O
I
FSM
Value
-65 to +175
1.6
600
600
600
10
50
Unit
o
C
°C/W
V
V
V
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0106, Rev. 4 (11/7/13)
©2013 Microsemi Corporation
Page 1 of 4
MSiCSN10060CC, CA, and D
MECHANICAL and PACKAGING
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CASE: Nickel plated copper base & 1020 steel frame
TERMINALS: Solder dipped copper cored 52 alloy or RoHS compliant matte-tin plating
MARKING: Alpha numeric
POLARITY: See
schematic
on last page
WEIGHT: Approximately 3.43 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
M SiC
Microsemi
Silicon Carbide
Schottky
TO-257 Package
Avg Forward Current (A)
S
N
10
060 CC
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Polarity
CC = Common Cathode
CA = Common Anode
D = Doubler
Voltage (x10)
Symbol
C
J
I
F
I
R
T
J
V
F
V
R
SYMBOLS & DEFINITIONS
Definition
Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1 MHz) and specified voltage.
Forward Current: The forward current dc value, no alternating component.
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Junction Temperature: The temperature of a semiconductor junction.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
T4-LDS-0106, Rev. 4 (11/7/13)
©2013 Microsemi Corporation
Page 2 of 4
Embedded System
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