TC55V400AFT-70 datasheet, PDF - EEWORLD Datasheet

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TC55V400AFT-70: Description262,144-WORD BY 16-BIT FULL CMOS STATIC RAM; Categorystorage storage; File Size171KB，11 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC55V400AFT-70 Overview

262,144-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55V400AFT-70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.55,20
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G48
length	12.4 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.55,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Minimum standby current	1.5 V
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12 mm
Base Number Matches	1

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TC55V400AFT-55,-70

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

262,144-WORD BY 16-BIT FULL CMOS STATIC RAM

DESCRIPTION

The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16

bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6

V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3

mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.5

standby

current (at V

3 V, Ta

25°C, maximum) when chip enable (

CE1

) is asserted high or (CE2) is asserted low.

There are three control inputs.

CE1

and CE2 are used to select the device and for data retention control, and

output enable (

) provides fast memory access. Data byte control pin (

) provides lower and upper byte

access. This device is well suited to various microprocessor system applications where high speed, low power and

battery backup are required. And, with a guaranteed operating extreme temperature range of

-40°

to 85°C, the

TC55V400AFT can be used in environments exhibiting extreme temperature conditions. The TC55V400AFT is

available in normal and reverse pinout plastic 48-pin thin-small-outline package (TSOP).

FEATURES

Low-power dissipation

Operating: 10.8 mW/MHz (typical)

Single power supply voltage of 2.3 to 3.6 V

Power down features using

CE1

and CE2

Data retention supply voltage of 1.5 to 3.6 V

Direct TTL compatibility for all inputs and outputs

Wide operating temperature range of

-40°

to 85°C

Standby Current (maximum):

3.6 V

3.0 V

Access Times (maximum):

TC55V400AFT

-55

Access Time

CE1

Access Time

-70

70 ns

35 ns

55 ns

30 ns

CE2 Access Time

Access Time

Package:

TSOPⅠ48-P-1214-0.50 (AFT) (Weight: 0.38 g typ)

PIN ASSIGNMENT

(TOP VIEW)

48 PIN TSOP

PIN NAMES

A0~A17

CE1

, CE2

Address Inputs

Chip Enable

Read/Write Control

Output Enable

Data Byte Control

Data Inputs/Outputs

Power

Ground

No Connection

R/W

I/O1~I/O16

(Normal)

GND

Pin No.

Pin Name

Pin No.

Pin Name

Pin No.

Pin Name

A15

A17

I/O3

A14

I/O11

A13

I/O4

A12

I/O12

A11

A10

I/O5

CE1

R/W

GND

CE2

I/O1

I/O10

A16

I/O9

I/O2

I/O13 I/O6

I/O14 I/O7

I/O15 I/O8

I/O16 GND

2001-09-04

1/11

TC55V400AFT-70 Related Products

	TC55V400AFT-70	TC55V400AFT-55
Description	262,144-WORD BY 16-BIT FULL CMOS STATIC RAM	262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	TSOP1	TSOP1
package instruction	TSOP1, TSSOP48,.55,20	TSOP1, TSSOP48,.55,20
Contacts	48	48
Reach Compliance Code	unknow	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	55 ns
I/O type	COMMON	COMMON
JESD-30 code	R-PDSO-G48	R-PDSO-G48
length	12.4 mm	12.4 mm
memory density	4194304 bi	4194304 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	16	16
Number of functions	1	1
Number of terminals	48	48
word count	262144 words	262144 words
character code	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	256KX16	256KX16
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP48,.55,20	TSSOP48,.55,20
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Minimum standby current	1.5 V	1.5 V
Maximum slew rate	0.06 mA	0.07 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	12 mm	12 mm

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