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FRS3K

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerETC
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FRS3K Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB

FRS3A ........ FRS3M
3 Amp. Surface Mounted Glass Passivated Fast Recovery Rectifier
Dimensions in mm.
CASE:
SMC/DO-214AB
Voltage
50 to 1000 V
Current
3.0 A
®
7.8
± 0.3
1.25
± 0.25
1.25
± 0.25
Week code
Glass passivated junction
High current capability
The plastic material carries U/L 94 V-0
Low profile package
Easy pick and place
High temperature soldering 260 ºC 10 sec
2.8
7.2
Year code
Type No. Closs
Standard soldering pad
MECHANICAL DATA
Terminals: Solder plated, solderable per IEC 68-2-20.
Standard Packaging: 8 mm. tape (EIA-RS-481).
Weight: 1.12 g.
Maximum Ratings and Electrical Characteristics at 25 ºC
FRS3A
FRS3B
J2
FRS3D FRS3G FRS3J FRS3K FRS3M
J3
J4
J5
J6
J7
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
j
R
th (j-l)
R
th (j-a)
T
j -
T
stg
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Forward current at T
L
= 75 ºC
J1
50
35
50
100
70
100
200
140
200
400
280
400
3A
100 A
1.3 V
10 µA
250µ A
600
420
600
800
560
800
1000
700
1000
8.3 ms. peak forward surge current
(Jedec Method)
Maximum Instantaneous Forward
Voltage at 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 ºC
Ta = 125 ºC
150 ns
Maximum Reverse Recovery Time (0.5/1/0.25A)
Typical Junction Capacitance (1MHz; -4V)
Typical Thermal Resistance
(5x5 mm
2
x 130 µ Copper Area)
Operating Junction and Storage
Temperature Range
250 ns
60 pF
15 ºC/W
50 ºC/W
300 ns
-55 to + 150 ºC
Jun - 03

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FRS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3M
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
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