SGU06N60 datasheet, PDF - EEWORLD Datasheet

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SGU06N60: DescriptionFast IGBT in NPT-technology; CategoryDiscrete semiconductor The transistor; File Size386KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SGU06N60 Overview

Fast IGBT in NPT-technology

SGU06N60 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-251AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
Is Samacsys	N
Other features	LOW CONDUCTION LOSS
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Maximum landing time (tf)	65 ns
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	67 W
Certification status	Not Qualified
Maximum rise time (tr)	24 ns
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	318 ns
Nominal on time (ton)	41 ns
Base Number Matches	1

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SGP06N60,

SGD06N60,

Fast IGBT in NPT-technology

•

75% lower

off

compared to previous generation

combined with low conduction losses

•

Short circuit withstand time – 10

µs

•

Designed for:

- Motor controls

- Inverter

•

NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

SGB06N60

SGU06N60

P-TO-251-3-1 (I-PAK)

(TO-251AA)

P-TO-252-3-1 (D-PAK)

(TO-252AA)

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

•

Complete product spectrum and PSpice Models :

http://www.infineon.com/igbt/

Type

SGP06N60

SGB06N60

SGD06N60

SGU06N60

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

= 25°C

= 100°C

Pulsed collector current,

limited by

jmax

Turn off safe operating area

≤

600V,

≤

150°C

Gate-emitter voltage

Avalanche energy, single pulse

= 6 A,

= 50 V,

= 25

Ω,

start at

= 25°C

Short circuit withstand time

Power dissipation

= 25°C

Operating junction and storage temperature

stg

-55...+150

°C

600V

CE(sat)

2.3V

150°C

Package

TO-220AB

TO-263AB

TO-252AA(DPAK)

TO-251AA(IPAK)

Ordering Code

Q67040-S4450

Q67040-S4448

Q67041-A4709

Q67040-S4449

Symbol

Value

600

6.9

Unit

Cpul s

±20

tot

µs

= 15V,

≤

600V,

≤

150°C

Allowed number of short circuits: <1000; time between short circuits: >1s.

Jul-02

SGU06N60 Related Products

	SGU06N60	Q67040-S4448	Q67040-S4449	Q67040-S4450	Q67041-A4709
Description	Fast IGBT in NPT-technology	Fast IGBT in NPT-technology	Fast IGBT in NPT-technology	Fast IGBT in NPT-technology	Fast IGBT in NPT-technology

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