EEWORLDEEWORLDEEWORLD

Part Number

Search

T459N2200TOC

Description
Silicon Controlled Rectifier, 459000mA I(T), 2200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size366KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

T459N2200TOC Overview

Silicon Controlled Rectifier, 459000mA I(T), 2200V V(DRM),

T459N2200TOC Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time300 µs
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current300 mA
Maximum leakage current80 mA
On-state non-repetitive peak current6800 A
Maximum on-state current459000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage2200 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

T459N2200TOC Related Products

T459N2200TOC T459N2400TOF T459N2600TOF T459N2000TOF T459N2200TOF T459N2400TOC T459N2600TOC T459N2000TOC
Description Silicon Controlled Rectifier, 459000mA I(T), 2200V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2400V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2600V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2000V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2200V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2400V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2600V V(DRM), Silicon Controlled Rectifier, 459000mA I(T), 2000V V(DRM),
Reach Compliance Code unknown unknow unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Nominal circuit commutation break time 300 µs 300 µs 300 µs 300 µs 300 µs 300 µs 300 µs 300 µs
Critical rise rate of minimum off-state voltage 500 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 500 V/us 500 V/us 500 V/us
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA
Maximum leakage current 80 mA 80 mA 80 mA 80 mA 80 mA 80 mA 80 mA 80 mA
On-state non-repetitive peak current 6800 A 6800 A 6800 A 6800 A 6800 A 6800 A 6800 A 6800 A
Maximum on-state current 459000 A 459000 A 459000 A 459000 A 459000 A 459000 A 459000 A 459000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 2200 V 2400 V 2600 V 2000 V 2200 V 2400 V 2600 V 2000 V
surface mount NO NO NO NO NO NO NO NO
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 46  1046  1044  2778  779  1  22  56  16  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号