N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt V
DS
* R
DS(on)
=28Ω
BS107PT
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
200
0.12
2
±20
500
-55 to +150
UNIT
V
A
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Drain-Source
Breakdown Voltage
Gate Body Leakage
Drain Cut-Off Current
Drain Cut-Off Current
Static Drain-Source
on-State Resistance
SYMBOL
BV
DSS
I
GSS
I
DSS
I
DSX
R
DS(on)
15
MIN.
200
TYP.
230
MAX.
UNIT
V
CONDITIONS.
I
D
=100µA, V
GS
=0V
VGS=15V, V
DS
=0V
V
GS
=0V, V
DS
=130V
V
GS
=0.2V, V
DS
=70V
V
GS
=2.6V, I
D
=20mA*
V
GS
=2.7V, I
D
=100mA*
10
30
1
28
30
nA
nA
µA
Ω
Ω
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
3-24
BS107PT
TYPICAL CHARACTERISTICS
I
D(On)
- On-State Drain Current (Amps)
1.2
I
D(On)
-On-State Drain Current (Amps)
1.0
0.8
0.6
0.4
0.2
V
GS=
10V
6V
0.5
0.4
0.3
V
GS
=
10V
6V
4V
4V
0.2
3V
0.1
3V
0
0
20
40
60
80
100
0
0
2
4
6
8
10
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
V
DS-
Drain Source
Voltage (Volts)
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
2.5
30
2.0
1.5
I
D=
100mA
1.0
50mA
25mA
0
2
2.5
3.0
3.5
4.0
4.5
20
I
D=
500mA
10
250mA
0
0
2
4
6
8
10
I00mA
0.5
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
I
D(On)
-On-State Drain Current (Amps)
0.6
60
V
DS
=25V
0.5
50
Voltage Saturation Characteristics
C
iss
0.4
V
DS
=10V
0.3
C-Capacitance (pF)
40
30
0.2
20
0.1
0
0
2
4
6
8
10
10
0
0
10
20
30
40
50
C
oss
C
rss
V
GS
-
Gate Source
Voltage (Volts)
V
DS
-Drain-Source
Voltage (Volts)
Transfer characteristics
Capacitance v drain-source voltage
3-25
BS107PT
TYPICAL CHARACTERISTICS
500
500
g
fs
-Transconductance (mS)
400
g
fs
-Transconductance (mS)
V
DS
=
25V
400
300
300
V
DS
=
25V
200
200
100
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
2
4
6
.8
10
I
D(On)
-Drain
Current (Amps)
V
GS
-Gate-Source Voltage (Volts)
Transconductance v drain current
R
DS(On)
-
Drain Source
Resistance (Ω)
Transconductance v gate-source voltage
V
GS
-
Gate-Source
Voltage (Volts)
10
I
D=
500mA
V
DS
= 50V 100V 180V
100
50
I
D=
500mA
5
250mA
I00mA
10
1
5
10
20
25mA
0
0
0.5
1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5
5.0
Q-Charge (nC)
V
GS-
Gate Source
Voltage (Volts)
Gate charge v gate-source voltage
2.4
Gate charge v gate-source voltage
Normalised R
DS(on)
and V
GS(th)
500
2.0
P
D
-Power Dissipation (mW)
1.6
1.2
0.8
ce
an
ist
es
eR
rc
ou
-S
ain
Dr
n)
(o
DS
R
V
GS=
5V
I
D=
100mA
400
300
Gate T
hre
I
D=
-1mA
V
DS
=
V
GS
shold V
oltage
V
GS
200
(TH)
100
0.5
-50 -40 -20 0
20 40
60 80 100 120 140 150
0
0
20
40
60
80 100 120 140 160 180 200
T-Temperature (°C)
T
amb
- Ambient Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Power v temperature derating curve
3-26
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