BYX99-1200R datasheet, PDF - EEWORLD Datasheet

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BYX99-1200R: DescriptionRectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size124KB，5 Pages; ManufacturerYAGEO; Websitehttp://www.yageo.com/

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BYX99-1200R Overview

Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon,

BYX99-1200R Parametric

Parameter Name	Attribute value
Maker	YAGEO
package instruction	O-MUPM-D1
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LEAKAGE CURRENT IS NOT AT 25 DEG C
application	POWER
Shell connection	ANODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.55 V
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	180 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	175 °C
Maximum output current	15 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Guideline	CECC50009-005
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse current	200 µA
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Base Number Matches	1

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BYX99-1200R Related Products

	BYX99-1200R	BYX99-1200	BYX99-600R	BYX99-600	BYX99-300	BYX99-300R
Description	Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 15A, 300V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 15A, 300V V(RRM), Silicon,
package instruction	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LEAKAGE CURRENT IS NOT AT 25 DEG C	LEAKAGE CURRENT IS NOT AT 25 DEG C	LEAKAGE CURRENT IS NOT AT 25 DEG C	LEAKAGE CURRENT IS NOT AT 25 DEG C	LEAKAGE CURRENT IS NOT AT 25 DEG C	LEAKAGE CURRENT IS NOT AT 25 DEG C
application	POWER	POWER	POWER	POWER	POWER	POWER
Shell connection	ANODE	CATHODE	ANODE	CATHODE	CATHODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.55 V	1.55 V	1.55 V	1.55 V	1.55 V	1.55 V
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	180 A	180 A	180 A	180 A	180 A	180 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	15 A	15 A	15 A	15 A	15 A	15 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	CECC50009-005	CECC50009-005	CECC50009-005	CECC50009-005	CECC50009-005	CECC50009-005
Maximum repetitive peak reverse voltage	1200 V	1200 V	600 V	600 V	300 V	300 V
Maximum reverse current	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	YAGEO	YAGEO	-	-	YAGEO	YAGEO
Base Number Matches	1	1	1	1	-	-

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