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FQD30N06TF_F080

Description
表面贴装型 N 通道 60 V 22.7A(Tc) 2.5W(Ta),44W(Tc) D-Pak
CategoryDiscrete semiconductor    The transistor   
File Size734KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

FQD30N06TF_F080 Overview

表面贴装型 N 通道 60 V 22.7A(Tc) 2.5W(Ta),44W(Tc) D-Pak

FQD30N06TF_F080 Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesQFET®
PackageTape and Reel (TR)
FET typeN channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)22.7A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
On-resistance (maximum value) at different Id and Vgs45 milliohms @ 11.4A, 10V
Vgs(th) (maximum value) when different Id4V @ 250µA
Vgs (maximum value)±25V
FET function-
Power dissipation (maximum)2.5W(Ta),44W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount type
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Drain-source voltage (Vdss)60 V
Gate charge (Qg) (maximum value) at different Vgs25 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds945 pF @ 25 V
Basic product numberFQD3
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