NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
US1A THRU US1J
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
Reverse Voltage -
50 to 600 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
♦
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦
For surface mount applications
♦
Glass passivated chip junctions
♦
Low profile package
♦
Easy pick and place
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
♦
Ultrafast recovery times for high efficiency
♦
Low forward voltage, low power loss
♦
Built-in strain relief, ideal for automated placement
♦
High temperature soldering guaranteed:
250°C/10 seconds on terminals
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 ounces, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
US1A
US1B
US1D
US1G
US1J
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=110°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance
(NOTE 1)
UA
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
UB
100
70
100
UD
200
140
200
1.0
UG
400
280
400
UJ
600
420
600
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
50.0
17.0
1.0
30.0
1.7
10.0
50.0
75.0
15.0
75.0
27.0
-55 to +150
Amps
Volts
µA
ns
pF
°C/W
°C
T
A
=25°C
T
A
=100°C
(NOTE 2)
(NOTE 3)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
4/98
RATING AND CHARACTERISTIC CURVES US1A THRU US1J
FIG. 1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.2
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.0
0.8
0.6
1.0
0.2
0
0
20
40
60
80
100
120
140
150
LEAD TEMPERATURE, °C
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR INDUCTIVE LOAD
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
L
=110°C
100
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
US1A THRU US1G
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
US1J - US1M
INSTANTANEOUS FORWARD CURRENT,
AMPERES
1
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
10
T
J
=150°C
T
J
=125°C
T
J
=100°C
0.1
T
J
=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
T
J
=25°C
0.1
0.01
0.01
0
20
40
60
80
100
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE (°C/W)
100
JUNCTION CAPACITANCE, pF
US1A - US1G
100
T
J
=25°C
f=1.0 MH
Z
Vsiq=50mVp-p
10
10
US1J - US1M
1
1
0.1
1
10
100
0.1
0.01
0.1
1
t, PULSE DURATION, sec
10
100
REVERSE VOLTAGE, VOLTS
Microcontroller MCU
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