MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
•
I
T (AV)
•
V
RRM
Average on-state current ..........
400A
Repetitive peak reverse voltage
........
400/800/1200/1600V
•
V
DRM
Repetitive peak off-state voltage
........
400/800/1200/1600V
•
DOUBLE ARMS
•
Insulated Type
(DZ Type)
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
(DZ)
CR
1
K
1
K
2
G
2
K
2
Dimensions in mm
K
2
G
2
A
2
CR
2
K
1
G
1
A
1
K
1
K
2
A
2
A
1
60
50
36
16
26
36
G
1
K
1
(CZ)
3–φ6.5
CR
1
A
1
K
1
K
2
CR
2
A
2
K
1
G
1
K
2
G
2
24
23
35
24
44
24
35
80±
0.2
180
24
26
4–M8
80±
0.2
(PZ)
CR
1
Tab#110, t=0.5
9
A
1
K
1
K
2
CR
2
K
2
G
2
A
2
K
1
G
1
LABEL
36
50
(UZ)
CR
1
K
2
G
2
A
2
K
1
K
2
CR
2
K
1
G
1
9
(DZ Type)
A
1
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
620
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=66°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
400
8000
2.7
×
10
5
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
200
10
3.0
10
5.0
4.0
–40~+125
–40~+125
Charged part to case
Main terminal screw M8
2500
8.83~10.8
90~110
1.96~3.92
20~40
1100
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=1200A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case, per 1/2 module
Case to fin, conductive grease applied, per 1/2 module
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
60
60
1.4
—
3.0
—
100
0.1
0.05
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0.6
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
4
7 T
j
=125°C
5
3
2
10000
8000
6000
4000
2000
1.0
1.4
1.8
2.2
2.6
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 710
1
0.10
TRANSIENT THERMAL IMPEDANCE
(°C/W)
GATE CHARACTERISTICS
4
3
2
10
1
GATE VOLTAGE (V)
V
FGM
=10V
V
GT
=3.0V
P
G(AV)
=
3.0W
P
GM
=10W
0.08
7
5
3
2
0.06
10
0
7
5 I
GT
=
100mA
3
2
–1
10
V
GD
=0.25V
I
FGM
=4.0A
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
T
j
=25°C
0.04
0.02
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
500
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
120°
180°
CASE TEMPERATURE (°C)
130
120
110
100
90
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
400
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
90°
60°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
300
200
PER SINGLE
ELEMENT
100
80 PER SINGLE
ELEMENT
70
60
50
0
θ=30°
60° 90° 120° 180°
0
0
50 100 150 200 250 300 350 400
AVERAGE ON-STATE CURRENT (A)
100
200
300
400
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
800
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
600
θ=30°
CASE TEMPERATURE (°C)
270° DC
180°
90°120°
60°
130
120
110
100
90
80
70
60
50
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
400
θ
200
PER SINGLE
ELEMENT
0
0
200
360°
RESISTIVE,
INDUCTIVE
LOAD
600
DC
θ=30°
60° 90°
0
200
120° 180°
400
270°
600
400
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
Microcontroller MCU
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