K4N26323AE datasheet, PDF - EEWORLD Datasheet

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K4N26323AE: Description128Mbit GDDR2 SDRAM; File Size834KB，52 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4N26323AE Overview

128Mbit GDDR2 SDRAM

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K4N26323AE-GC

128M GDDR2 SDRAM

128Mbit GDDR2 SDRAM

1M x 32Bit x 4 Banks

GDDR2 SDRAM

with Differential Data Strobe and DLL

Revision 1.7

January 2003

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev. 1.7 (Jan. 2003)

K4N26323AE Related Products

	K4N26323AE	K4N26323AE-GC20	K4N26323AE-GC25	K4N26323AE-GC22
Description	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM
Is it Rohs certified?	-	incompatible	incompatible	incompatible
Maker	-	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	-	BGA	BGA	BGA
package instruction	-	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32
Contacts	-	144	144	144
Reach Compliance Code	-	unknow	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99
access mode	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	-	0.35 ns	0.45 ns	0.45 ns
Other features	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	500 MHz	400 MHz	450 MHz
I/O type	-	COMMON	COMMON	COMMON
JESD-30 code	-	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
JESD-609 code	-	e0	e0	e0
length	-	13 mm	13 mm	13 mm
memory density	-	134217728 bi	134217728 bi	134217728 bi
Memory IC Type	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	-	32	32	32
Number of functions	-	1	1	1
Number of ports	-	1	1	1
Number of terminals	-	144	144	144
word count	-	4194304 words	4194304 words	4194304 words
character code	-	4000000	4000000	4000000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	-	4MX32	4MX32	4MX32
Output characteristics	-	3-STATE	3-STATE	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	-	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32
Package shape	-	SQUARE	SQUARE	SQUARE
Package form	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	-	1.8,2.5 V	1.8,2.5 V	1.8,2.5 V
Certification status	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	-	4096	4096	4096
Maximum seat height	-	1.4 mm	1.4 mm	1.4 mm
self refresh	-	YES	YES	YES
Continuous burst length	-	4	4	4
Maximum standby current	-	0.11 A	0.095 A	0.1 A
Maximum slew rate	-	1.4 mA	1.18 mA	1.3 mA
Maximum supply voltage (Vsup)	-	2.6 V	2.6 V	2.6 V
Minimum supply voltage (Vsup)	-	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	-	2.5 V	2.5 V	2.5 V
surface mount	-	YES	YES	YES
technology	-	CMOS	CMOS	CMOS
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	BALL	BALL	BALL
Terminal pitch	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	-	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	-	13 mm	13 mm	13 mm

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