K4N26323AE-GC25 datasheet, PDF

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K4N26323AE-GC25: Description128Mbit GDDR2 SDRAM; Categorystorage storage; File Size834KB，52 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4N26323AE-GC25 Overview

128Mbit GDDR2 SDRAM

K4N26323AE-GC25 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA144,12X12,32
Contacts	144
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
JESD-30 code	S-PBGA-B144
JESD-609 code	e0
length	13 mm
memory density	134217728 bi
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	144
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA144,12X12,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8,2.5 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.4 mm
self refresh	YES
Continuous burst length	4
Maximum standby current	0.095 A
Maximum slew rate	1.18 mA
Maximum supply voltage (Vsup)	2.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	13 mm

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K4N26323AE-GC

128M GDDR2 SDRAM

128Mbit GDDR2 SDRAM

1M x 32Bit x 4 Banks

GDDR2 SDRAM

with Differential Data Strobe and DLL

Revision 1.7

January 2003

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev. 1.7 (Jan. 2003)

K4N26323AE-GC25 Related Products

	K4N26323AE-GC25	K4N26323AE	K4N26323AE-GC20	K4N26323AE-GC22
Description	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM	128Mbit GDDR2 SDRAM
Is it Rohs certified?	incompatible	-	incompatible	incompatible
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG
Parts packaging code	BGA	-	BGA	BGA
package instruction	LFBGA, BGA144,12X12,32	-	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32
Contacts	144	-	144	144
Reach Compliance Code	unknow	-	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.45 ns	-	0.35 ns	0.45 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz	-	500 MHz	450 MHz
I/O type	COMMON	-	COMMON	COMMON
JESD-30 code	S-PBGA-B144	-	S-PBGA-B144	S-PBGA-B144
JESD-609 code	e0	-	e0	e0
length	13 mm	-	13 mm	13 mm
memory density	134217728 bi	-	134217728 bi	134217728 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM
memory width	32	-	32	32
Number of functions	1	-	1	1
Number of ports	1	-	1	1
Number of terminals	144	-	144	144
word count	4194304 words	-	4194304 words	4194304 words
character code	4000000	-	4000000	4000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
organize	4MX32	-	4MX32	4MX32
Output characteristics	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	-	LFBGA	LFBGA
Encapsulate equivalent code	BGA144,12X12,32	-	BGA144,12X12,32	BGA144,12X12,32
Package shape	SQUARE	-	SQUARE	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
power supply	1.8,2.5 V	-	1.8,2.5 V	1.8,2.5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	4096	-	4096	4096
Maximum seat height	1.4 mm	-	1.4 mm	1.4 mm
self refresh	YES	-	YES	YES
Continuous burst length	4	-	4	4
Maximum standby current	0.095 A	-	0.11 A	0.1 A
Maximum slew rate	1.18 mA	-	1.4 mA	1.3 mA
Maximum supply voltage (Vsup)	2.6 V	-	2.6 V	2.6 V
Minimum supply voltage (Vsup)	2.4 V	-	2.4 V	2.4 V
Nominal supply voltage (Vsup)	2.5 V	-	2.5 V	2.5 V
surface mount	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	-	BALL	BALL
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	13 mm	-	13 mm	13 mm

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