MT4LC4M16N3TG-6 datasheet, PDF

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MT4LC4M16N3TG-6: Description4M X 16 EDO DRAM, 50 ns, PDSO50; Categorystorage; File Size352KB，24 Pages; ManufacturerMicron; Websitehttp://www.micron.com/

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MT4LC4M16N3TG-6 Overview

4M X 16 EDO DRAM, 50 ns, PDSO50

MT4LC4M16N3TG-6 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	50
Maximum operating temperature	70 Cel
Minimum operating temperature	0.0 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	3 V
Rated supply voltage	3.3 V
Minimum access time	50 ns
Processing package description	0.400 INCH, Plastic, TSOP-50
state	DISCONTINUED
Craftsmanship	CMOS
packaging shape	Rectangle
Package Size	SMALL OUTLINE, THIN PROFILE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.8000 mm
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	COMMERCIAL
memory width	16
organize	4M × 16
storage density	6.71E7 deg
operating mode	Synchronize
Number of digits	4.19E6 words
Number of digits	4M
Access method	FAST PAGE WITH EDO
Memory IC type	EDO dynamic random access memory
Number of ports	1

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4 MEG x 16

EDO DRAM

DRAM

FEATURES

• Single +3.3V ±0.3V power supply

• Industry-standard x16 pinout, timing, functions,

and package

• 12 row, 10 column addresses (R6)

13 row, 9 column addresses (N3)

• High-performance CMOS silicon-gate process

• All inputs, outputs and clocks are LVTTL-compatible

• Extended Data-Out (EDO) PAGE MODE access

• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH

distributed across 64ms

• Optional self refresh (S) for low-power data

retention

MT4LC4M16R6, MT4LC4M16N3

For the latest data sheet, please refer to the Micron Web

site:

www.micronsemi.com/mti/msp/html/datasheet.html

PIN ASSIGNMENT (Top View)

50-Pin TSOP

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

WE#

RAS#

†

A12

OPTIONS

• Plastic Package

50-pin TSOP (400 mil)

• Timing

50ns access

60ns access

• Refresh Rates

Standard Refresh

Self Refresh

• Operating Temperature Range

Commercial (0°C to +70°C)

Extended (-40°C to +85°C)

MARKING

-5

-6

DQ15

DQ14

DQ13

DQ12

DQ11

DQ10

DQ9

DQ8

CASL#

CASH#

OE#

NC/A12

†

A11

A10

None

for N3 version, NC for R6 version.

MT4LC4M16R6

Configuration

Refresh

Row Address

Column Addressing

4 Meg x 16

4K (A0-A11)

1K (A0-A9)

MT4LC4M16N3

4 Meg x 16

8K (A0-A12)

512 (A0-A8)

None

IT**

NOTE:

1. The “#” symbol indicates signal is active LOW.

*Contact factory for availability.

**Available only on MT4LC4M16R6 standard refresh device.

Part Number Example:

4 MEG x 16 EDO DRAM PART NUMBERS

PART NUMBER

MT4LC4M16R6TG-x

MT4LC4M16R6TG-x S

MT4LC4M16N3TG-x

MT4LC4M16N3TG-x S

x = speed

REFRESH

ADDRESSING PACKAGE REFRESH

400-TSOP Standard

400-TSOP

Self

400-TSOP Standard

400-TSOP

Self

MT4LC4M16R6TG-5

KEY TIMING PARAMETERS

SPEED

-5

-6

RAC

CAC

CAS

84ns

104ns

50ns

60ns

20ns

25ns

30ns

13ns

15ns

8ns

10ns

4 Meg x 16 EDO DRAM

D29_2.p65 – Rev. 5/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT4LC4M16N3TG-6 Related Products

	MT4LC4M16N3TG-6	MT4LC4M16R6TG-6S	MT4LC4M16R6TG-6	MT4LC4M16R6TG-5S	MT4LC4M16R6TG-5	MT4LC4M16R6-1	MT4LC4M16N3TG-6S	MT4LC4M16N3TG-5S	MT4LC4M16N3TG-5
Description	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50	4M X 16 EDO DRAM, 50 ns, PDSO50
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	50	50	50	50	50	50	50	50	50
Maximum operating temperature	70 Cel	70 Cel	70 Cel	70 Cel	70 Cel	70 Cel	70 Cel	70 Cel	70 Cel
Minimum operating temperature	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply/operating voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Rated supply voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Minimum access time	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns
Processing package description	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50	0.400 INCH, Plastic, TSOP-50
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
Craftsmanship	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal spacing	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm
terminal coating	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead
Terminal location	pair	pair	pair	pair	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
memory width	16	16	16	16	16	16	16	16	16
organize	4M × 16	4M × 16	4M × 16	4M × 16	4M × 16	4M × 16	4M × 16	4M × 16	4M × 16
storage density	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg	6.71E7 deg
operating mode	Synchronize	Synchronize	Synchronize	Synchronize	Synchronize	Synchronize	Synchronize	Synchronize	Synchronize
Access method	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Memory IC type	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory	EDO dynamic random access memory
Number of ports	1	1	1	1	1	1	1	1	1
Number of digits	4M	4M	4M	4M	4M	4M	4M	4M	4M

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