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MR5008L

Description
AUTOMOTIVE RECTIFIER DIODES
CategoryDiscrete semiconductor    diode   
File Size17KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

MR5008L Overview

AUTOMOTIVE RECTIFIER DIODES

MR5008L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
MR5000L - MR5010L
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
AUTOMOTIVE
RECTIFIER DIODES
MR - L
0.053 (1.35)
0.050 (1.27)
0.246 (6.25)
0.234 (5.94)
0.342 (8.69)
0.332 (8.43)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Cathode polarity band
* Mounting position : Any
* Weight : 2.69 grams
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current Tc = 150°C
Peak Forward Surge Current Single half sine
wave superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 50 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Thermal Resistance (Note 1)
Junction Temperature Range
Storage Temperature Range
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
MR
MR
MR
MR
MR
MR
MR
5000L 5001L 5002L 5004L 5006L 5008L 5010L
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
50
420
600
560
800
700
1000
UNIT
Volts
Volts
Volts
Amps.
I
FSM
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
500
1.1
5.0
1.0
0.8
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
mA
°C/W
°C
°C
Note
: (1) Thermal resistance from junction to case.
UPDATE : APRIL 23, 1998

MR5008L Related Products

MR5008L MR5010L MR5006L MR5004L MR5002L MR5001L MR5000L
Description AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES AUTOMOTIVE RECTIFIER DIODES
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 500 A 500 A 500 A 500 A 500 A 500 A 500 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V 1000 V 600 V 400 V 200 V 100 V 50 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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