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BD676

Description
Darlington Transistors 4A 45V 40W PNP
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD676 Overview

Darlington Transistors 4A 45V 40W PNP

BD676 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-225AA
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
BD676G,
BD678G,
BD680G,
BD682G,
BD676AG,
BD678AG,
BD680AG,
BD682TG
http://onsemi.com
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Collector-Base Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
100
V
CB
45
60
80
100
V
EB
I
C
I
B
P
D
40
0.32
T
J
, T
stg
−55 to +150
W
W/°C
°C
5.0
4.0
0.1
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
= Year
WW
= Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number:
BD676/D

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