Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–2 A, –12 V.
R
DS(ON)
= 110 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 150 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 215 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Compact industry standard SC70-6 surface mount
package
D
D
S
1
6
2
5
Pin 1
SC70-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–12
±
8
(Note 1a)
Units
V
V
A
W
°C
–2
–6
0.75
0.48
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.30
Device
FDG330P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDG330P Rev D (W)
FDG330P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –10 V, V
GS
= 0 V
V
GS
= 8 V,
V
GS
= –8 V,
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
–0.4
–0.7
2.3
84
107
145
98
–6
6.8
110
150
215
148
–2.7
–1
100
–100
–1.5
mV/°C
µA
nA
nA
V
mV/°C
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –2.0 A
V
GS
= –2.5 V, I
D
= –1.7 A
V
GS
= –1.8 V, I
D
= –1.4 A
V
GS
= –4.5 V, I
D
= –2.0 A, T
J
= 125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.0 A
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –6.0 V,
f = 1.0 MHz
V
GS
= 0 V,
477
186
124
pF
pF
pF
20
20
22
32
7
ns
ns
ns
ns
nC
nC
nC
–0.62
A
V
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –6.0 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
Ω
10
11
12
18
V
DS
= –6.0 V,
V
GS
= –4.5 V
I
D
= –2.0 A,
5
0.8
1.4
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.62 A
(Note 2)
–0.7
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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