Ordering number : EN7469A
FTD2017A
SANYO Semiconductors
DATA SHEET
FTD2017A
Features
•
•
•
•
•
N-Channel Silicon MOSFET
Load Switching Applications
Low ON-resistance.
2.5V drive.
Mounting height 1.1mm
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm
2
!0.8mm)
1unit
Mounted on a ceramic board (1000mm
2
!0.8mm)
Conditions
Ratings
20
±12
6
40
1.3
1.4
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=4.5V
ID=6A, VGS=4V
ID=3A, VGS=3.1V
ID=3A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
20
1
±10
0.5
9
13
17
18
19
20
1530
230
215
23
24
30
33
1.3
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : D2017A
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806PA SY IM / 22004 TS IM TA-3937 No.7469-1/4
FTD2017A
5.0
ID -- VDS
3 .0 V
2.0
V
8
7
6
5
4
3
2
1
0
ID -- VGS
VDS=10V
4.5
4.0
Drain Current, ID -- A
4.0V
2.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VGS=1.5V
Drain Current, ID -- A
4 .5 V
°
C
Ta=7
5
0
0.2
0.4
0.6
0.8
1.0
1.2
25
°
C
1.4
1.6
--25
°
C
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
1.8
Drain-to-Source Voltage, VDS -- V
50
IT05892
50
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT05893
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
45
40
35
30
45
40
35
30
25
20
15
10
5
6A
25
20
15
10
5
0
0
2
4
6
8
10
12
IT05894
=4.0V
, V GS
.0A
I D=6
=2.5V
, V GS
.0A
I D=3
=4.5V
.0A, V GS
I D=6
ID=3A
0
--75
--50
--25
0
25
50
75
100
125
150
175
Gate-to-Source Voltage, VGS -- V
2
y
fs -- ID
Ambient Temperature, Ta --
°C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IT05895
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
VDS=10V
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
Ta
=
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
1000
7
5 7 10
IT05896
0.01
0.4
0.5
0.6
--2
5
0.7
25
°
C
°
C
C
5
°
-2
°
C
=-
Ta
75
Source Current, IS -- A
°
C
25
75
°
C
0.8
0.9
1.0
IT05897
SW Time -- ID
Switching Time, SW Time -- ns
5
3
2
VDD=10V
VGS=4.5V
7
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
td(off)
2
Ciss
100
7
5
3
2
tf
1000
7
5
3
2
tr
td(on)
Coss
Crss
0
2
4
6
8
10
12
14
16
18
20
10
0.1
100
2
3
5
7
1.0
2
3
5
7
Drain Current, ID -- A
IT05898
Drain-to-Source Voltage, VDS -- V
IT05899
No.7469-3/4
FTD2017A
4.5
4.0
3.5
VGS -- Qg
VDS=10V
ID=6A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=40A
<10µs
ID=6A
10
1m
10
ms
10
0
µ
s
s
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
IT05900
DC
Operation in this area
is limited by RDS(on).
0m
s
op
era
tio
n
0.01
0.01
Ta=25°C
Single pulse
Mounted on a ceramic board(1000mm
2
!0.8mm)
1unit
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2 3
IT05901
Total Gate Charge, Qg -- nC
1.5
PD -- Ta
Mounted on a ceramic board
(1000mm
2
!0.8mm)
Allowable Power Dissipation(FET1), PD -- W
Drain-to-Source Voltage, VDS -- V
1.4
1.3
1.2
PD(FET1) -- PD(FET2)
Allowable Power Dissipation, PD -- W
1.4
1.3
M
ou
nte
1.0
do
1.0
na
To
t
1
ce
ram
al
d
it
0.8
ic
un
iss
bo
ip
ard
at
io
n
0.6
(1
0
00
mm
0.5
2
0.4
!
0
.8m
m)
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2 1.3 1.4
IT05903
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT05902
Allowable Power Dissipation(FET2), PD -- W
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No.7469-4/4
Industrial Control Electronics
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