is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
V
®
0.150Ω
Ω
S
D
POWER MOS V
®
FREDFET
SO
ISOTOP
®
T
2
-2
7
"UL Recognized"
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT6015JFVR
UNIT
Volts
Amps
600
35
140
±30
±40
450
3.6
-55 to 150
300
35
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
600
35
0.150
250
1000
±100
2
4
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 17.5A)
Ohms
µA
nA
Volts
050-7264 Rev A 8-2003
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
APT Website - http://www.advancedpower.com
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT6015JFVR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 35A @ 25°C
V
GS
= 15V
V
DD
= 300V
I
D
= 35A @ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
7500
900
320
315
45
125
15
13
45
5
9000
1260
480
475
70
190
30
26
70
10
ns
nC
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
dt
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
35
140
1.3
15
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -35A)
5
dv
/
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -35A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -35A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -35A,
di
/
dt
= 100A/µs)
250
500
1.6
5.5
15
27
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.28
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 4.08mH, R = 25Ω, Peak I = 35A
j
G
L
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.2
0.05
0.1
0.05
PDM
0.01
0.005
Note:
0.02
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7264 Rev A 8-2003
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
APT6015JFVR
100
I
D
, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 10V & 15V
5.5V
I
D
, DRAIN CURRENT (AMPERES)
100
VGS=6V, 7V, 10V & 15V
80
80
5.5V
60
5V
60
5V
40
4.5V
20
4V
0
50
100
150
200
250
300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
40
4.5V
20
4V
0
4
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
TJ = +125°C
1.6
V
GS
NORMALIZED TO
= 10V @ 17.5A
80
1.4
VGS=10V
1.2
VGS=20V
60
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = +125°C
TJ = +25°C
0
TJ = -55°C
1.0
20
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
40
I
D
, DRAIN CURRENT (AMPERES)
0.8
0
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
30
1.05
20
1.00
10
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
0.90
-50
2.5
I
D
= 17.5A
= 10V
V
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.1
1.0
0.9
0.8
0.7
050-7264 Rev A 8-2003
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT6015JFVR
200
I
D
, DRAIN CURRENT (AMPERES)
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100
50
10µS
100µS
C, CAPACITANCE (pF)
10,000
5,000
Ciss
10
5
1mS
Coss
1,000
500
Crss
10mS
1
.5
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
5 10
50 100
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
= 35A
200
100
TJ =+150°C
50
TJ =+25°C
16
VDS=120V
VDS=300V
12
VDS=480V
8
10
5
4
100
200
300
400
500
600
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
050-7264 Rev A 8-2003
1.95 (.077)
2.14 (.084)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Dimensions in Millimeters and (Inches)
Gate
V
Isolation
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
ISOTOP
®
is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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