MJE241 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> MJE241

MJE241: Description4 A, 100 V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerCentral Semiconductor

Download Datasheet Parametric Compare View All

MJE241 Overview

4 A, 100 V, PNP, Si, POWER TRANSISTOR

MJE241 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-based maximum capacity	50 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	2 MHz
VCEsat-Max	0.6 V

Preview

Download Datasheet

View All

145 Adams Avenue, Hauppauge, NY 11788 USA

Tel: (631) 435-1110 • Fax: (631) 435-1824

MJE241 Related Products

	MJE241	MJE240	MJE244	MJE250	MJE254	MJE251	MJE242	MJE252	MJE243	MJE253
Description	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	-	Central Semiconductor	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	_compli	_compli	not_compliant	-	-	_compli	not_compliant	not_compliant	_compli	unknow
ECCN code	EAR99	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	-	-	4 A	4 A	4 A	4 A	4 A
Collector-based maximum capacity	50 pF	-	50 pF	-	-	70 pF	50 pF	70 pF	-	70 pF
Collector-emitter maximum voltage	80 V	80 V	100 V	-	-	80 V	80 V	80 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	-	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	15	10	-	-	20	10	10	15	15
JEDEC-95 code	TO-126	TO-126	TO-126	-	-	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	-	-	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C	-	-	150 °C	150 °C	150 °C	140 °C	150 °C
Minimum operating temperature	-65 °C	-	-65 °C	-	-	-65 °C	-65 °C	-65 °C	-	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	-	-	PNP	NPN	PNP	NPN	PNP
Maximum power consumption environment	1.5 W	-	1.5 W	-	-	1.5 W	1.5 W	1.5 W	-	1.5 W
Maximum power dissipation(Abs)	15 W	1.5 W	15 W	-	-	15 W	15 W	15 W	1.5 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	-	-	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	2 MHz	2 MHz	2 MHz	-	-	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz
VCEsat-Max	0.6 V	-	0.6 V	-	-	0.6 V	0.3 V	0.3 V	-	0.6 V

Recommended Resources

Single tube TV antenna amplifier circuit

Photoelectric control hand drying circuit

Voice controlled electronic music toy circuit

TL431 AC voltage regulator circuit diagram

FOTILE FYW-T2P warm water dispenser circuit diagram

Infrared detection alarm circuit

The difference between the three USB speeds: USB 2.0 has three speeds: LS (Low Speed) 1.5Mbps FS (Full Speed) 12Mbps HS (High Speed) 480Mbps LS is mainly used in low-end keyboards and mice. The actual speed is very low. It is not recommended exc...; lyang996 Embedded System

100 sets of Pingtouge RISC-V low-power RVB2601 development boards are waiting for you, as well as projectors and other gifts~: A new journey has begun in 2022. EEWorld community and Pingtouge invite you to build the RISC-V ecosystem and participate in the RVB2601 open source creative application collection activity. A total o...; EEWORLD社区 XuanTie RISC-V Activity Zone

Request: Design paper of dot matrix display screen based on single chip microcomputer: I am looking for a design paper on dot matrix display screen based on single chip microcomputer. If you are interested, please contact QQ1210979462. I will chat on QQ about the salary!...; sheng Embedded System

Stepper motor control issues: Graduation thesis for an in-service master, the design requirements for the drive power supply of a stepper motor are as follows: 1. The control circuit, drive circuit and other related circuits of th...; liuhk1234 MCU

Most of my classmates who graduated last year have resigned.: At that time, the company recruited a large number of new people who had just graduated from undergraduate and graduate schools. The average age was 25 years old. The new assistant was a girl I person...; simonprince Talking

FPGA_100 Days Journey_if_else and case.pdf: FPGA_100 Days Journey_if_else and case.pdf...; zxopenljx FPGA/CPLD

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components