MJE252 datasheet, PDF - EEWORLD Datasheet

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MJE252: Description4 A, 100 V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerCentral Semiconductor

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MJE252 Overview

4 A, 100 V, PNP, Si, POWER TRANSISTOR

MJE252 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-based maximum capacity	70 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	2 MHz
VCEsat-Max	0.3 V

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145 Adams Avenue, Hauppauge, NY 11788 USA

Tel: (631) 435-1110 • Fax: (631) 435-1824

MJE252 Related Products

	MJE252	MJE240	MJE244	MJE250	MJE254	MJE251	MJE242	MJE241	MJE243	MJE253
Description	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR	4 A, 100 V, PNP, Si, POWER TRANSISTOR
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	-	Central Semiconductor	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	not_compliant	_compli	not_compliant	-	-	_compli	not_compliant	_compli	_compli	unknow
ECCN code	EAR99	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	-	-	4 A	4 A	4 A	4 A	4 A
Collector-based maximum capacity	70 pF	-	50 pF	-	-	70 pF	50 pF	50 pF	-	70 pF
Collector-emitter maximum voltage	80 V	80 V	100 V	-	-	80 V	80 V	80 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	-	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	15	10	-	-	20	10	20	15	15
JEDEC-95 code	TO-126	TO-126	TO-126	-	-	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	-	-	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C	-	-	150 °C	150 °C	150 °C	140 °C	150 °C
Minimum operating temperature	-65 °C	-	-65 °C	-	-	-65 °C	-65 °C	-65 °C	-	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	NPN	NPN	-	-	PNP	NPN	NPN	NPN	PNP
Maximum power consumption environment	1.5 W	-	1.5 W	-	-	1.5 W	1.5 W	1.5 W	-	1.5 W
Maximum power dissipation(Abs)	15 W	1.5 W	15 W	-	-	15 W	15 W	15 W	1.5 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	-	-	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	2 MHz	2 MHz	2 MHz	-	-	2 MHz	2 MHz	2 MHz	2 MHz	2 MHz
VCEsat-Max	0.3 V	-	0.6 V	-	-	0.6 V	0.3 V	0.6 V	-	0.6 V

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