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MJE254

Description
4 A, 100 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size60KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

MJE254 Overview

4 A, 100 V, PNP, Si, POWER TRANSISTOR

MJE254 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current4 A
Maximum Collector-Emitter Voltage100 V
Processing package descriptionTO-126VAR, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor40
Rated crossover frequency40 MHz
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824

MJE254 Related Products

MJE254 MJE240 MJE244 MJE250 MJE251 MJE242 MJE241 MJE252 MJE243 MJE253
Description 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR
Number of terminals 3 3 3 3 3 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Number of components 1 1 1 1 1 1 1 1 1 1
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? - Contains lead Contains lead - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible - incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code - _compli not_compliant - _compli not_compliant _compli not_compliant _compli unknow
ECCN code - EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) - 4 A 4 A - 4 A 4 A 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage - 80 V 100 V - 80 V 80 V 80 V 80 V 100 V 100 V
Configuration - SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 15 10 - 20 10 20 10 15 15
JEDEC-95 code - TO-126 TO-126 - TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code - R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code - e0 e0 - e0 e0 e0 e0 e0 e0
Maximum operating temperature - 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 140 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - NPN NPN - PNP NPN NPN PNP NPN PNP
Maximum power dissipation(Abs) - 1.5 W 15 W - 15 W 15 W 15 W 15 W 1.5 W 15 W
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - NO NO - NO NO NO NO NO NO
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Nominal transition frequency (fT) - 2 MHz 2 MHz - 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz
Maker - - Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Collector-based maximum capacity - - 50 pF - 70 pF 50 pF 50 pF 70 pF - 70 pF
Minimum operating temperature - - -65 °C - -65 °C -65 °C -65 °C -65 °C - -65 °C
Maximum power consumption environment - - 1.5 W - 1.5 W 1.5 W 1.5 W 1.5 W - 1.5 W
VCEsat-Max - - 0.6 V - 0.6 V 0.3 V 0.6 V 0.3 V - 0.6 V

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