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Datasheet> All Categories > Discrete semiconductor> The transistor> MJE251
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MJE251

Description
4 A, 100 V, PNP, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size60KB，1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

MJE251 Overview

4 A, 100 V, PNP, Si, POWER TRANSISTOR

MJE251 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-based maximum capacity70 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
VCEsat-Max0.6 V

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Tel: (631) 435-1110 • Fax: (631) 435-1824

MJE251 Related Products

MJE251 MJE240 MJE244 MJE250 MJE254 MJE242 MJE241 MJE252 MJE243 MJE253
Description 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR 4 A, 100 V, PNP, Si, POWER TRANSISTOR
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead Contains lead - - Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible - - incompatible incompatible incompatible incompatible incompatible
Maker Central Semiconductor - Central Semiconductor - - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code _compli _compli not_compliant - - not_compliant _compli not_compliant _compli unknow
ECCN code EAR99 EAR99 EAR99 - - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 4 A 4 A 4 A - - 4 A 4 A 4 A 4 A 4 A
Collector-based maximum capacity 70 pF - 50 pF - - 50 pF 50 pF 70 pF - 70 pF
Collector-emitter maximum voltage 80 V 80 V 100 V - - 80 V 80 V 80 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE - - SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 15 10 - - 10 20 10 15 15
JEDEC-95 code TO-126 TO-126 TO-126 - - TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 - - e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C - - 150 °C 150 °C 150 °C 140 °C 150 °C
Minimum operating temperature -65 °C - -65 °C - - -65 °C -65 °C -65 °C - -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP NPN NPN - - NPN NPN PNP NPN PNP
Maximum power consumption environment 1.5 W - 1.5 W - - 1.5 W 1.5 W 1.5 W - 1.5 W
Maximum power dissipation(Abs) 15 W 1.5 W 15 W - - 15 W 15 W 15 W 1.5 W 15 W
Certification status Not Qualified Not Qualified Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO - - NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING - - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Nominal transition frequency (fT) 2 MHz 2 MHz 2 MHz - - 2 MHz 2 MHz 2 MHz 2 MHz 2 MHz
VCEsat-Max 0.6 V - 0.6 V - - 0.3 V 0.6 V 0.3 V - 0.6 V

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