4 A, 100 V, PNP, Si, POWER TRANSISTOR
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Central Semiconductor |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 4 A |
| Collector-based maximum capacity | 70 pF |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 1.5 W |
| Maximum power dissipation(Abs) | 15 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| VCEsat-Max | 0.6 V |
| MJE253 | MJE240 | MJE244 | MJE250 | MJE254 | MJE251 | MJE242 | MJE241 | MJE252 | MJE243 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | - | - | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - | - | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Central Semiconductor | - | Central Semiconductor | - | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | unknow | _compli | not_compliant | - | - | _compli | not_compliant | _compli | not_compliant | _compli |
| ECCN code | EAR99 | EAR99 | EAR99 | - | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 4 A | 4 A | 4 A | - | - | 4 A | 4 A | 4 A | 4 A | 4 A |
| Collector-based maximum capacity | 70 pF | - | 50 pF | - | - | 70 pF | 50 pF | 50 pF | 70 pF | - |
| Collector-emitter maximum voltage | 100 V | 80 V | 100 V | - | - | 80 V | 80 V | 80 V | 80 V | 100 V |
| Configuration | SINGLE | SINGLE | SINGLE | - | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 15 | 15 | 10 | - | - | 20 | 10 | 20 | 10 | 15 |
| JEDEC-95 code | TO-126 | TO-126 | TO-126 | - | - | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 | - | - | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | - | - | 150 °C | 150 °C | 150 °C | 150 °C | 140 °C |
| Minimum operating temperature | -65 °C | - | -65 °C | - | - | -65 °C | -65 °C | -65 °C | -65 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | NPN | NPN | - | - | PNP | NPN | NPN | PNP | NPN |
| Maximum power consumption environment | 1.5 W | - | 1.5 W | - | - | 1.5 W | 1.5 W | 1.5 W | 1.5 W | - |
| Maximum power dissipation(Abs) | 15 W | 1.5 W | 15 W | - | - | 15 W | 15 W | 15 W | 15 W | 1.5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | - | - | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Nominal transition frequency (fT) | 2 MHz | 2 MHz | 2 MHz | - | - | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 2 MHz |
| VCEsat-Max | 0.6 V | - | 0.6 V | - | - | 0.6 V | 0.3 V | 0.6 V | 0.3 V | - |
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