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M76DW52003BA

Description
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
File Size150KB,27 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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M76DW52003BA Overview

32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

M76DW52003TA
M76DW52003BA
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory
and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
MULTIPLE MEMORY PRODUCT
– 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot
Block, Flash Memory
– 4 Mbit (256Kb x 16) SRAM
SUPPLY VOLTAGE
– V
CCF
= 2.7V to 3.3V
– V
CCS
= 2.7V to 3.3V
– V
PPF
= 12V for Fast Program (optional)
Figure 1. Package
FBGA
ACCESS TIME: 70, 90ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M76DW52003TA: 225Eh
– Bottom Device Code, M76DW52003BA:
225Fh
LFBGA73 (ZA)
8 x 11.6 mm
FLASH MEMORY
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
SRAM
4 Mbit (256Kb x 16)
ACCESS TIME: 70ns
LOW V
CCS
DATA RETENTION: 1.5V
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M76DW52003BA Related Products

M76DW52003BA M76DW52003BA70ZT M76DW52003TA70ZT M76DW52003TA M76DW52003BA90ZT M76DW52003TA90ZT
Description 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
Is it Rohs certified? - incompatible incompatible - incompatible incompatible
Parts packaging code - BGA BGA - BGA BGA
package instruction - 8 X 11.60 MM, 0.80 MM PITCH, LFBGA-73 8 X 11.60 MM, 0.80 MM PITCH, LFBGA-73 - 8 X 11.60 MM, 0.80 MM PITCH, LFBGA-73 8 X 11.60 MM, 0.80 MM PITCH, LFBGA-73
Contacts - 73 73 - 73 73
Reach Compliance Code - compli compli - compli compli
Maximum access time - 70 ns 70 ns - 90 ns 90 ns
Other features - STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8 STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8 - STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8 STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8
JESD-30 code - R-PBGA-B73 R-PBGA-B73 - R-PBGA-B73 R-PBGA-B73
JESD-609 code - e0 e0 - e0 e0
length - 11.6 mm 11.6 mm - 11.6 mm 11.6 mm
memory density - 33554432 bi 33554432 bi - 33554432 bi 33554432 bi
Memory IC Type - MEMORY CIRCUIT MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
memory width - 16 16 - 16 16
Mixed memory types - FLASH+SRAM FLASH+SRAM - FLASH+SRAM FLASH+SRAM
Number of functions - 1 1 - 1 1
Number of terminals - 73 73 - 73 73
word count - 2097152 words 2097152 words - 2097152 words 2097152 words
character code - 2000000 2000000 - 2000000 2000000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C - 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C - -40 °C -40 °C
organize - 2MX16 2MX16 - 2MX16 2MX16
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - LFBGA LFBGA - LFBGA LFBGA
Encapsulate equivalent code - BGA73,10X12,32 BGA73,10X12,32 - BGA73,10X12,32 BGA73,10X12,32
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH - GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
power supply - 3,3/3.3 V 3,3/3.3 V - 3,3/3.3 V 3,3/3.3 V
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum seat height - 1.4 mm 1.4 mm - 1.4 mm 1.4 mm
Maximum standby current - 0.0001 A 0.0001 A - 0.0001 A 0.0001 A
Maximum slew rate - 0.02 mA 0.02 mA - 0.02 mA 0.02 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 2.7 V 2.7 V - 2.7 V 2.7 V
Nominal supply voltage (Vsup) - 3 V 3 V - 3 V 3 V
surface mount - YES YES - YES YES
technology - CMOS CMOS - CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL
Terminal surface - TIN LEAD TIN LEAD - TIN LEAD TIN LEAD
Terminal form - BALL BALL - BALL BALL
Terminal pitch - 0.8 mm 0.8 mm - 0.8 mm 0.8 mm
Terminal location - BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
width - 8 mm 8 mm - 8 mm 8 mm
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