2015-12-14
Silicon NPN Phototransistor in SMT TOPLED
®
RG-Package
Version 1.3
SFH 3211 FA
Features:
•
Spectral range of sensitivity:
(typ) 750 ... 1120 nm
•
Package:
TOPLED
•
Special:
High linearity
•
Available in groups
Applications
•
Miniature photointerrupters
•
Industrial electronics
•
For control and drive circuits
Ordering Information
Type:
Photocurrent
I
PCE
[µA]
λ = 950 nm, E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
SFH 3211 FA
SFH 3211 FA-3/4
Note:
Ordering Code
16 ... 80
25 ... 80
Q65110A2526
Q65110A2528
Only one bin within one packing unit (variation less than 2:1)
2015-12-14
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance for mounting on pcb
Characteristics
(T
A
= 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
Dark current
(V
CE
= 20 V, E = 0)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
S max
λ
10%
A
LxW
ϕ
C
CE
Symbol
T
op
; T
stg
V
CE
I
C
I
CS
P
tot
V
ESD
R
thJA
Values
-40 ... 100
35
15
75
165
2000
450
SFH 3211 FA
Unit
°C
V
mA
mA
mW
V
K/W
Values
980
(typ) 750
... 1120
0.038
(typ) 0.45 x
0.45
± 60
5
1 (≤ 50)
Unit
nm
nm
mm
2
mm x
mm
°
pF
nA
(typ (max)) I
CE0
2015-12-14
2
Version 1.3
Grouping
Group
Min Photocurrent
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
I
PCE, min
[µA]
SFH 3211 FA - 2
SFH 3211 FA - 3
SFH 3211 FA - 4
Group
16
25
40
SFH 3211 FA
Max Photocurrent Typ Photocurrent Rise and fall time
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
I
PCE, max
[µA]
32
50
80
E
V
= 1000 lx, Std.
Light A, V
CE
= 5 V
I
PCE
[µA]
420
650
1000
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
t
r
, t
f
[µs]
6
7
8
Collector-emitter saturation voltage
I
C
= I
PCEmin
x 0.3, E
e
= 0.1 mW/cm
2
V
CEsat
[mV]
SFH 3211 FA - 2
SFH 3211 FA - 3
SFH 3211 FA - 4
Note.:
150
150
150
I
PCEmin
is the min. photocurrent of the specified group.
Relative Spectral Sensitivity
1)
page 13
S
rel
= f(λ)
100
S
rel
%
80
OHF00468
Photocurrent
1)
page 13
I
PCE
= f(E
e
),
V
CE
= 5 V
Ι
PCE
10
3
µ
A
OHF01924
10
2
60
10
1
40
4
3
2
10
0
20
0
400 500 600 700 800 900
λ
nm 1100
10
-1 -3
10
10
-2
mW/cm
2
E
e
10
0
2015-12-14
3
Version 1.3
Photocurrent
1)
page 13
I
PCE
= f(V
CE
), E
e
= Parameter
Ι
PCE
10
0
mA
OHF01529
SFH 3211 FA
Photocurrent
1)
page 13
I
PCE
/ I
PCE
(25°C) = f(T
A
), V
CE
= 5 V
1
mW
cm
2
Ι
PCE 25
1.4
Ι
PCE
1.6
OHF01524
mW
0.5
2
cm
0.25
10
-1
0.1
mW
cm
2
mW
cm
2
1.2
1.0
0.8
0.6
0.4
0.2
10
-2
0
5
10
15
20
25
30 V 35
V
CE
0
-25
0
25
50
75 C 100
T
A
Dark Current
1)
page 13
I
CEO
= f(V
CE
), E = 0
Ι
CEO
10
1
nA
OHF01527
Dark Current
1)
page 13
I
CEO
= f(T
A
), E = 0
Ι
CEO
10
3
nA
OHF01530
10
0
10
2
10
-1
10
1
10
-2
10
0
10
-3
0
5
10
15
20
25
30 V 35
V
CE
10
-1
-25
0
25
50
75 ˚C 100
T
A
2015-12-14
4
Version 1.3
Collector-Emitter Capacitance
1)
page 13
C
CE
= f(V
CE
), f = 1 MHz, E = 0
5.0
C
CE
pF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
-2
10
-1
10
0
10
1
V 10
2
V
CE
0
0
20
40
60
40
80
120
P
tot
OHF01528
SFH 3211 FA
Power Consumption
P
tot
= f(T
A
)
200
mW
160
OHF00871
80 ˚C 100
T
A
Directional Characteristics
1)
page 13
S
rel
= f(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2015-12-14
5
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