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1N5476B

Description
Variable Capacitance Diode, 100pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size206KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N5476B Overview

Variable Capacitance Diode, 100pF C(T), 30V, Silicon, Abrupt, DO-7

1N5476B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.9
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1
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