SST39SF010A-45-4I-NH datasheet, PDF

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SST39SF010A-45-4I-NH: DescriptionFlash, 128KX8, 45ns, PQCC32, PLASTIC, MS-016AE, LCC-32; Categorystorage storage; File Size290KB，24 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST39SF010A-45-4I-NH Overview

Flash, 128KX8, 45ns, PQCC32, PLASTIC, MS-016AE, LCC-32

SST39SF010A-45-4I-NH Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1934641189
Parts packaging code	QFJ
package instruction	PLASTIC, MS-016AE, LCC-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum access time	45 ns
command user interface	YES
Data polling	YES
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	1048576 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	32
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.556 mm
Department size	4K
Maximum standby current	0.0001 A
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
switch bit	YES
type	NOR TYPE
width	11.43 mm

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories

Data Sheet

FEATURES:

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 45 ns

– 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF010A/020A/040 are CMOS Multi-Purpose

Flash (MPF) manufactured with SST’s proprietary, high

performance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39SF010A/020A/040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle

Bit or Data# Polling to indicate the completion of Program

operation. To protect against inadvertent write, they have

on-chip hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 10,000 cycles. Data retention is rated

at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for appli-

cations that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

S71147-06-000

8/04

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF010A/020A/040 are offered in 32-lead PLCC and

32-lead TSOP packages. A 600 mil, 32-pin PDIP is also

available. See Figures 1, 2, and 3 for pin assignments.

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