SMC9-65608EV-30SB datasheet, PDF

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SMC9-65608EV-30SB: Description128K X 8 STANDARD SRAM, 30 ns, DIP32; Categorystorage storage; File Size328KB，15 Pages; ManufacturerAtmel (Microchip)

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SMC9-65608EV-30SB Overview

128K X 8 STANDARD SRAM, 30 ns, DIP32

SMC9-65608EV-30SB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	DIP
package instruction	DIP, DIP32,.4
Contacts	32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	30 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
length	40.64 mm
memory density	1048576 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	4.32 mm
Maximum standby current	0.00015 A
Minimum standby current	2 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	30k Rad(Si) V
width	10.16 mm

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Features

•

Operating Voltage: 5V

•

Access Time: 30, 45 ns

•

Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Packages: FP32 and SB32

TTL Compatible Inputs and Outputs

Asynchronous

Single 5V Supply

Equal Cycle and Access Time

Gated Inputs:

– No Pull-up/down

– Resistors Are Required

QML Q and V with SMD 5962-89598

ESCC B with Specification 9301/047

•

Rad. Tolerant

128K x 8

Very Low Power

5V CMOS SRAM

M65608E

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151I–AERO–03/04

SMC9-65608EV-30SB Related Products

	SMC9-65608EV-30SB	MMC9-65608EV-30	MMDJ-65608EV-30	MMDJ-65608EV-45	5962-8959847Q6A	SMDJ-65608EV-45SB	SMDJ-65608EV-30SB	SMC9-65608EV-45SB	MMC9-65608EV-45	MM0-65608EV-30-E
Description	128K X 8 STANDARD SRAM, 30 ns, DIP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DIP32	128K X 8 STANDARD SRAM, 45 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible	-
Maker	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	-	-	Atmel (Microchip)	Atmel (Microchip)	-
Parts packaging code	DIP	DIP	DFP	DFP	DIE	-	DFP	DIP	DIP	-
package instruction	DIP, DIP32,.4	DIP, DIP32,.4	DFP, FL32,.4	DFP, FL32,.4	DIE, PGA66,11X11	-	DFP, FL32,.4	DIP, DIP32,.4	DIP, DIP32,.4	-
Contacts	32	32	32	32	-	-	32	32	32	-
Reach Compliance Code	compli	compliant	compli	compliant	compli	-	compli	compli	compli	-
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-
Maximum access time	30 ns	30 ns	30 ns	45 ns	30 ns	-	30 ns	45 ns	45 ns	-
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON	-
JESD-30 code	R-CDIP-T32	R-CDIP-T32	R-XDFP-F32	R-XDFP-F32	X-XUUC-N	-	R-XDFP-F32	R-CDIP-T32	R-CDIP-T32	-
JESD-609 code	e0	e0	e0	e0	e0	-	e0	e0	e0	-
length	40.64 mm	40.64 mm	20.825 mm	20.825 mm	-	-	20.825 mm	40.64 mm	40.64 mm	-
memory density	1048576 bi	1048576 bit	1048576 bi	1048576 bit	1048576 bi	-	1048576 bi	1048576 bi	1048576 bi	-
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-
memory width	8	8	8	8	8	-	8	8	8	-
Number of functions	1	1	1	1	1	-	1	1	1	-
Number of terminals	32	32	32	32	66	-	32	32	32	-
word count	131072 words	131072 words	131072 words	131072 words	131072 words	-	131072 words	131072 words	131072 words	-
character code	128000	128000	128000	128000	128000	-	128000	128000	128000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	-	125 °C	125 °C	125 °C	-
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C	-
organize	128KX8	128KX8	128KX8	128KX8	128KX8	-	128KX8	128KX8	128KX8	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	-
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
encapsulated code	DIP	DIP	DFP	DFP	DIE	-	DFP	DIP	DIP	-
Encapsulate equivalent code	DIP32,.4	DIP32,.4	FL32,.4	FL32,.4	PGA66,11X11	-	FL32,.4	DIP32,.4	DIP32,.4	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	FLATPACK	FLATPACK	UNCASED CHIP	-	FLATPACK	IN-LINE	IN-LINE	-
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	-
power supply	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-
Filter level	MIL-STD-883 Class B	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-PRF-38535 Class Q	-	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883	-
Maximum seat height	4.32 mm	4.32 mm	2.72 mm	2.72 mm	-	-	2.72 mm	4.32 mm	4.32 mm	-
Maximum standby current	0.00015 A	0.00015 A	0.00015 A	0.00015 A	-	-	0.00015 A	0.00015 A	0.00015 A	-
Minimum standby current	2 V	2 V	2 V	2 V	4.5 V	-	2 V	2 V	2 V	-
Maximum slew rate	0.13 mA	0.13 mA	0.13 mA	0.1 mA	-	-	0.13 mA	0.1 mA	0.1 mA	-
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	-
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V	-
surface mount	NO	NO	YES	YES	YES	-	YES	NO	NO	-
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	-
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-	MILITARY	MILITARY	MILITARY	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - hot dipped	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	FLAT	FLAT	NO LEAD	-	FLAT	THROUGH-HOLE	THROUGH-HOLE	-
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	-	1.27 mm	2.54 mm	2.54 mm	-
Terminal location	DUAL	DUAL	DUAL	DUAL	UPPER	-	DUAL	DUAL	DUAL	-
total dose	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-
width	10.16 mm	10.16 mm	10.415 mm	10.415 mm	-	-	10.415 mm	10.16 mm	10.16 mm	-

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