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SMDJ-65608EV-30SB

Description
128K X 8 STANDARD SRAM, 30 ns, DFP32
Categorystorage    storage   
File Size328KB,15 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

SMDJ-65608EV-30SB Overview

128K X 8 STANDARD SRAM, 30 ns, DFP32

SMDJ-65608EV-30SB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDFP
package instructionDFP, FL32,.4
Contacts32
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time30 ns
I/O typeCOMMON
JESD-30 codeR-XDFP-F32
JESD-609 codee0
length20.825 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDFP
Encapsulate equivalent codeFL32,.4
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B
Maximum seat height2.72 mm
Maximum standby current0.00015 A
Minimum standby current2 V
Maximum slew rate0.13 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose30k Rad(Si) V
width10.415 mm
Base Number Matches1
Features
Operating Voltage: 5V
Access Time: 30, 45 ns
Very Low Power Consumption
– Active: 250 mW (Typ)
– Standby: 1 µW (Typ)
– Data Retention: 0.5 µW (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
Equal Cycle and Access Time
Gated Inputs:
– No Pull-up/down
– Resistors Are Required
QML Q and V with SMD 5962-89598
ESCC B with Specification 9301/047
Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. 4151I–AERO–03/04
1

SMDJ-65608EV-30SB Related Products

SMDJ-65608EV-30SB MMC9-65608EV-30 MMDJ-65608EV-30 MMDJ-65608EV-45 5962-8959847Q6A SMDJ-65608EV-45SB SMC9-65608EV-45SB SMC9-65608EV-30SB MMC9-65608EV-45 MM0-65608EV-30-E
Description 128K X 8 STANDARD SRAM, 30 ns, DFP32 128K X 8 STANDARD SRAM, 30 ns, CDIP32 128K X 8 STANDARD SRAM, 30 ns, DFP32 128K X 8 STANDARD SRAM, 45 ns, DFP32 128K X 8 STANDARD SRAM, 30 ns, CDIP32 128K X 8 STANDARD SRAM, 45 ns, DFP32 128K X 8 STANDARD SRAM, 45 ns, DIP32 128K X 8 STANDARD SRAM, 30 ns, DIP32 128K X 8 STANDARD SRAM, 45 ns, CDIP32 128K X 8 STANDARD SRAM, 30 ns, CDIP32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - incompatible incompatible incompatible -
Parts packaging code DFP DIP DFP DFP DIE - DIP DIP DIP -
package instruction DFP, FL32,.4 DIP, DIP32,.4 DFP, FL32,.4 DFP, FL32,.4 DIE, PGA66,11X11 - DIP, DIP32,.4 DIP, DIP32,.4 DIP, DIP32,.4 -
Contacts 32 32 32 32 - - 32 32 32 -
Reach Compliance Code compli compliant compli compliant compli - compli compli compli -
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C - 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C -
Maximum access time 30 ns 30 ns 30 ns 45 ns 30 ns - 45 ns 30 ns 45 ns -
I/O type COMMON COMMON COMMON COMMON COMMON - COMMON COMMON COMMON -
JESD-30 code R-XDFP-F32 R-CDIP-T32 R-XDFP-F32 R-XDFP-F32 X-XUUC-N - R-CDIP-T32 R-CDIP-T32 R-CDIP-T32 -
JESD-609 code e0 e0 e0 e0 e0 - e0 e0 e0 -
length 20.825 mm 40.64 mm 20.825 mm 20.825 mm - - 40.64 mm 40.64 mm 40.64 mm -
memory density 1048576 bi 1048576 bit 1048576 bi 1048576 bit 1048576 bi - 1048576 bi 1048576 bi 1048576 bi -
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM -
memory width 8 8 8 8 8 - 8 8 8 -
Number of functions 1 1 1 1 1 - 1 1 1 -
Number of terminals 32 32 32 32 66 - 32 32 32 -
word count 131072 words 131072 words 131072 words 131072 words 131072 words - 131072 words 131072 words 131072 words -
character code 128000 128000 128000 128000 128000 - 128000 128000 128000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C - 125 °C 125 °C 125 °C -
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C -55 °C -
organize 128KX8 128KX8 128KX8 128KX8 128KX8 - 128KX8 128KX8 128KX8 -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE -
Package body material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED UNSPECIFIED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
encapsulated code DFP DIP DFP DFP DIE - DIP DIP DIP -
Encapsulate equivalent code FL32,.4 DIP32,.4 FL32,.4 FL32,.4 PGA66,11X11 - DIP32,.4 DIP32,.4 DIP32,.4 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR UNSPECIFIED - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLATPACK IN-LINE FLATPACK FLATPACK UNCASED CHIP - IN-LINE IN-LINE IN-LINE -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL -
power supply 5 V 5 V 5 V 5 V 5 V - 5 V 5 V 5 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
Filter level MIL-STD-883 Class B MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-PRF-38535 Class Q - MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 -
Maximum seat height 2.72 mm 4.32 mm 2.72 mm 2.72 mm - - 4.32 mm 4.32 mm 4.32 mm -
Maximum standby current 0.00015 A 0.00015 A 0.00015 A 0.00015 A - - 0.00015 A 0.00015 A 0.00015 A -
Minimum standby current 2 V 2 V 2 V 2 V 4.5 V - 2 V 2 V 2 V -
Maximum slew rate 0.13 mA 0.13 mA 0.13 mA 0.1 mA - - 0.1 mA 0.13 mA 0.1 mA -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V - 5 V 5 V 5 V -
surface mount YES NO YES YES YES - NO NO NO -
technology CMOS CMOS CMOS CMOS CMOS - CMOS CMOS CMOS -
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY - MILITARY MILITARY MILITARY -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - hot dipped - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form FLAT THROUGH-HOLE FLAT FLAT NO LEAD - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal pitch 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm - 2.54 mm 2.54 mm 2.54 mm -
Terminal location DUAL DUAL DUAL DUAL UPPER - DUAL DUAL DUAL -
total dose 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V - - 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V -
width 10.415 mm 10.16 mm 10.415 mm 10.415 mm - - 10.16 mm 10.16 mm 10.16 mm -
Maker - Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) - - Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) -
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