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MMC9-65608EV-30

Description
128K X 8 STANDARD SRAM, 30 ns, CDIP32
Categorystorage    storage   
File Size328KB,15 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

MMC9-65608EV-30 Overview

128K X 8 STANDARD SRAM, 30 ns, CDIP32

MMC9-65608EV-30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeDIP
package instructionDIP, DIP32,.4
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time30 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
JESD-609 codee0
length40.64 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height4.32 mm
Maximum standby current0.00015 A
Minimum standby current2 V
Maximum slew rate0.13 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
total dose30k Rad(Si) V
width10.16 mm
Features
Operating Voltage: 5V
Access Time: 30, 45 ns
Very Low Power Consumption
– Active: 250 mW (Typ)
– Standby: 1 µW (Typ)
– Data Retention: 0.5 µW (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
Equal Cycle and Access Time
Gated Inputs:
– No Pull-up/down
– Resistors Are Required
QML Q and V with SMD 5962-89598
ESCC B with Specification 9301/047
Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. 4151I–AERO–03/04
1

MMC9-65608EV-30 Related Products

MMC9-65608EV-30 MMDJ-65608EV-30 MMDJ-65608EV-45 5962-8959847Q6A SMDJ-65608EV-45SB SMDJ-65608EV-30SB SMC9-65608EV-45SB SMC9-65608EV-30SB MMC9-65608EV-45 MM0-65608EV-30-E
Description 128K X 8 STANDARD SRAM, 30 ns, CDIP32 128K X 8 STANDARD SRAM, 30 ns, DFP32 128K X 8 STANDARD SRAM, 45 ns, DFP32 128K X 8 STANDARD SRAM, 30 ns, CDIP32 128K X 8 STANDARD SRAM, 45 ns, DFP32 128K X 8 STANDARD SRAM, 30 ns, DFP32 128K X 8 STANDARD SRAM, 45 ns, DIP32 128K X 8 STANDARD SRAM, 30 ns, DIP32 128K X 8 STANDARD SRAM, 45 ns, CDIP32 128K X 8 STANDARD SRAM, 30 ns, CDIP32
Is it Rohs certified? incompatible incompatible incompatible incompatible - incompatible incompatible incompatible incompatible -
Maker Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) - - - Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) -
Parts packaging code DIP DFP DFP DIE - DFP DIP DIP DIP -
package instruction DIP, DIP32,.4 DFP, FL32,.4 DFP, FL32,.4 DIE, PGA66,11X11 - DFP, FL32,.4 DIP, DIP32,.4 DIP, DIP32,.4 DIP, DIP32,.4 -
Contacts 32 32 32 - - 32 32 32 32 -
Reach Compliance Code compliant compli compliant compli - compli compli compli compli -
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C - 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C -
Maximum access time 30 ns 30 ns 45 ns 30 ns - 30 ns 45 ns 30 ns 45 ns -
I/O type COMMON COMMON COMMON COMMON - COMMON COMMON COMMON COMMON -
JESD-30 code R-CDIP-T32 R-XDFP-F32 R-XDFP-F32 X-XUUC-N - R-XDFP-F32 R-CDIP-T32 R-CDIP-T32 R-CDIP-T32 -
JESD-609 code e0 e0 e0 e0 - e0 e0 e0 e0 -
length 40.64 mm 20.825 mm 20.825 mm - - 20.825 mm 40.64 mm 40.64 mm 40.64 mm -
memory density 1048576 bit 1048576 bi 1048576 bit 1048576 bi - 1048576 bi 1048576 bi 1048576 bi 1048576 bi -
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM -
memory width 8 8 8 8 - 8 8 8 8 -
Number of functions 1 1 1 1 - 1 1 1 1 -
Number of terminals 32 32 32 66 - 32 32 32 32 -
word count 131072 words 131072 words 131072 words 131072 words - 131072 words 131072 words 131072 words 131072 words -
character code 128000 128000 128000 128000 - 128000 128000 128000 128000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C - 125 °C 125 °C 125 °C 125 °C -
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C -55 °C -55 °C -
organize 128KX8 128KX8 128KX8 128KX8 - 128KX8 128KX8 128KX8 128KX8 -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE -
Package body material CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
encapsulated code DIP DFP DFP DIE - DFP DIP DIP DIP -
Encapsulate equivalent code DIP32,.4 FL32,.4 FL32,.4 PGA66,11X11 - FL32,.4 DIP32,.4 DIP32,.4 DIP32,.4 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR UNSPECIFIED - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form IN-LINE FLATPACK FLATPACK UNCASED CHIP - FLATPACK IN-LINE IN-LINE IN-LINE -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL -
power supply 5 V 5 V 5 V 5 V - 5 V 5 V 5 V 5 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified -
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-PRF-38535 Class Q - MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 -
Maximum seat height 4.32 mm 2.72 mm 2.72 mm - - 2.72 mm 4.32 mm 4.32 mm 4.32 mm -
Maximum standby current 0.00015 A 0.00015 A 0.00015 A - - 0.00015 A 0.00015 A 0.00015 A 0.00015 A -
Minimum standby current 2 V 2 V 2 V 4.5 V - 2 V 2 V 2 V 2 V -
Maximum slew rate 0.13 mA 0.13 mA 0.1 mA - - 0.13 mA 0.1 mA 0.13 mA 0.1 mA -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V - 5 V 5 V 5 V 5 V -
surface mount NO YES YES YES - YES NO NO NO -
technology CMOS CMOS CMOS CMOS - CMOS CMOS CMOS CMOS -
Temperature level MILITARY MILITARY MILITARY MILITARY - MILITARY MILITARY MILITARY MILITARY -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - hot dipped - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE FLAT FLAT NO LEAD - FLAT THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal pitch 2.54 mm 1.27 mm 1.27 mm 2.54 mm - 1.27 mm 2.54 mm 2.54 mm 2.54 mm -
Terminal location DUAL DUAL DUAL UPPER - DUAL DUAL DUAL DUAL -
total dose 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V - - 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V 30k Rad(Si) V -
width 10.16 mm 10.415 mm 10.415 mm - - 10.415 mm 10.16 mm 10.16 mm 10.16 mm -
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